Electrical Noise and VLSI Interconnect Reliability

IEEE Transactions on Electron Devices

Volumn 41, Issue 11, 1994, Pages 2165-2172

  Chen, Tsong Ming ^a   Yassine, Abdullah M ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL DEFECTS; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SIGNAL NOISE MEASUREMENT; SIGNAL TO NOISE RATIO; THERMAL NOISE; THIN FILMS; VLSI CIRCUITS;

ELECTRICAL NOISE; ELECTROMIGRATION ACTUATION ENERGY; TIME OF FAILURE; VLSI INTERCONNECT RELIABILITY; WAFER LEVEL RELIABILITY TESTING;

SEMICONDUCTING FILMS;

EID: 0028550880     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.333837     Document Type: Article

References (31)

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