The 1/f2 noise spectrum derived from electromigration–induced resistance change

Japanese Journal of Applied Physics

Volumn 29, Issue 7, 1990, Pages 1283-1285

  Liou, D M ^a   Gong, J ^a   Chen, C C ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

1 f2 noise; Aluminum thin film; Electromigration; Electromigration induced resistance change; Rate equation

Indexed keywords

ALUMINUM AND ALLOYS - THIN FILMS; SPECTRUM ANALYSIS;

ELECTROMIGRATION; NOISE POWER SPECTRA;

RESISTORS;

EID: 0025452396     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.29.1283     Document Type: Article

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