Characterization of electromigration parameters in VLSI metallizations by 1/ƒ noise measurements

Solid State Electronics

Volumn 34, Issue 2, 1991, Pages 185-188

  Çelik Butler, Zeynep ^a   Yang, Wiyi ^a   Hoang, Hoang H ^b   Hunter, William R ^b  

^a SOUTHERN METHODIST UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS;

ELECTROMIGRATION;

INTEGRATED CIRCUITS, VLSI;

EID: 0026105211     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(91)90087-F     Document Type: Article

References (10)

1. Electromigration and low-frequency resistance fluctuations in aluminum thin-film interconnections