An accurate model of fully-depleted surrounding gate transistor (FD-SGT)

IEICE Transactions on Electronics

Volumn E80-C, Issue 7, 1997, Pages 905-909

  Endoh, Tetsuo ^a   Nakmura, Tairiku ^a   Masuoka, Fujio ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Current voltage clmracteristics; FD SGT; SGT; Threshold vltage

Indexed keywords

CAPACITANCE; COMMUNICATION CHANNELS (INFORMATION THEORY); CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTOR DEVICE MODELS;

FULLY DEPLETED SURROUNDING GATE TRANSISTOR (FD SGT); THRESHOLD VOLTAGE;

GATES (TRANSISTOR);

EID: 0031187306     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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