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Volumn 39, Issue 8, 1992, Pages 1876-1881

Numerical Analysis of a Cylindrical Thin-Pillar Transistor (CYNTHIA)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, LSI; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE--SILICON ON INSULATOR TECHNOLOGY;

EID: 0026909715     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.144678     Document Type: Article
Times cited : (66)

References (9)
  • 4
    • 0024918341 scopus 로고
    • A fully depleted lean-channel transistor (DELTA)
    • D. Hisamoto, T. Kaga, Y. Kawamoto, and E. Takeda, “A fully depleted lean-channel transistor (DELTA),” in IEDM Tech. Dig., 1989, pp. 833–836.
    • (1989) IEDM Tech. Dig. , pp. 833-836
    • Hisamoto, D.1    Kaga, T.2    Kawamoto, Y.3    Takeda, E.4
  • 6
    • 0021406605 scopus 로고
    • Generalized scaling theory and its application to a 1/4 micrometer MOSFET design
    • G. Baccrani, M. R. Wordeman, and R. H. Dennard, “Generalized scaling theory and its application to a 1/4 micrometer MOSFET design,” IEEE Trans. Electron Device, vol. ED-31, pp. 452–462, 1984.
    • (1984) IEEE Trans. Electron Device , vol.ED-31 , pp. 452-462
    • Baccrani, G.1    Wordeman, M.R.2    Dennard, R.H.3
  • 7
    • 0018683243 scopus 로고
    • Characterization of the electron mobility in the inverted (100) Si surface
    • A. G. Sabnis and J. T. Clemens, “Characterization of the electron mobility in the inverted (100) Si surface,” in IEDM Tech. Dig., 1979, pp. 18–21.
    • (1979) IEDM Tech. Dig. , pp. 18-21
    • Sabnis, A.G.1    Clemens, J.T.2
  • 9
    • 0020140054 scopus 로고
    • Metal-(n)AlGaAs-GaAs two-dimensional electron gas FET
    • D. Delagebeaudeuf and N. Linh, “Metal-(n)AlGaAs-GaAs two-dimensional electron gas FET,” IEEE Trans. Electron Device, vol. ED-29, pp. 955–959, 1982.
    • (1982) IEEE Trans. Electron Device , vol.ED-29 , pp. 955-959
    • Delagebeaudeuf, D.1    Linh, N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.