-
1
-
-
0024172246
-
High performance CMOS surrounding gate transistor (SGT) for ultra high density LSIs
-
H. Takato, K. Sunouchi, N. Okabe, A. Nitayama, K. Hieda, F. Horiguchi, and F. Masuoka, “High performance CMOS surrounding gate transistor (SGT) for ultra high density LSIs,” in IEDM Tech. Dig., 1988 pp. 222–225.
-
(1988)
IEDM Tech. Dig.
, pp. 222-225
-
-
Takato, H.1
Sunouchi, K.2
Okabe, N.3
Nitayama, A.4
Hieda, K.5
Horiguchi, F.6
Masuoka, F.7
-
2
-
-
0024870892
-
A surrounding gate transistor (SGT) cell for 64/256 Mbit DRAMs
-
K. Sunouchi, H. Takato, N. Okabe, T. Yamada, T. Ozaki, S. Inoue, K. Hashimoto, K. Hieda, A. Nitayama, F. Horiguchi, and F. Masuoka, “A surrounding gate transistor (SGT) cell for 64/256 Mbit DRAMs,” in IEDM Tech. Dig., 1989, pp. 23–26.
-
(1989)
IEDM Tech. Dig.
, pp. 23-26
-
-
Sunouchi, K.1
Takato, H.2
Okabe, N.3
Yamada, T.4
Ozaki, T.5
Inoue, S.6
Hashimoto, K.7
Hieda, K.8
Nitayama, A.9
Horiguchi, F.10
Masuoka, F.11
-
3
-
-
0026122410
-
Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's
-
H. Takato, K. Sunouchi, N. Okabe, A. Nitayama, K. Hieda, F. Horiguchi, and F. Mausuoka, “Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's,” IEEE Trans. Electron Devices, vol. 38, pp. 573–578, 1991.
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, pp. 573-578
-
-
Takato, H.1
Sunouchi, K.2
Okabe, N.3
Nitayama, A.4
Hieda, K.5
Horiguchi, F.6
Mausuoka, F.7
-
4
-
-
0024918341
-
A fully depleted lean-channel transistor (DELTA)
-
D. Hisamoto, T. Kaga, Y. Kawamoto, and E. Takeda, “A fully depleted lean-channel transistor (DELTA),” in IEDM Tech. Dig., 1989, pp. 833–836.
-
(1989)
IEDM Tech. Dig.
, pp. 833-836
-
-
Hisamoto, D.1
Kaga, T.2
Kawamoto, Y.3
Takeda, E.4
-
6
-
-
0021406605
-
Generalized scaling theory and its application to a 1/4 micrometer MOSFET design
-
G. Baccrani, M. R. Wordeman, and R. H. Dennard, “Generalized scaling theory and its application to a 1/4 micrometer MOSFET design,” IEEE Trans. Electron Device, vol. ED-31, pp. 452–462, 1984.
-
(1984)
IEEE Trans. Electron Device
, vol.ED-31
, pp. 452-462
-
-
Baccrani, G.1
Wordeman, M.R.2
Dennard, R.H.3
-
7
-
-
0018683243
-
Characterization of the electron mobility in the inverted (100) Si surface
-
A. G. Sabnis and J. T. Clemens, “Characterization of the electron mobility in the inverted (100) Si surface,” in IEDM Tech. Dig., 1979, pp. 18–21.
-
(1979)
IEDM Tech. Dig.
, pp. 18-21
-
-
Sabnis, A.G.1
Clemens, J.T.2
-
8
-
-
0026117513
-
Multi-pillar gate transistor (M-SGT) for compact and high-speed circuits
-
A. Nitayama, H. Takato, N. Okabe, K. Sunouchi, K. Hieda, F. Horiguchi, and F. Masuoka, “Multi-pillar gate transistor (M-SGT) for compact and high-speed circuits,” IEEE Trans. Electron Device, vol. ED-38, pp. 579–583, 1991.
-
(1991)
IEEE Trans. Electron Device
, vol.ED-38
, pp. 579-583
-
-
Nitayama, A.1
Takato, H.2
Okabe, N.3
Sunouchi, K.4
Hieda, K.5
Horiguchi, F.6
Masuoka, F.7
-
9
-
-
0020140054
-
Metal-(n)AlGaAs-GaAs two-dimensional electron gas FET
-
D. Delagebeaudeuf and N. Linh, “Metal-(n)AlGaAs-GaAs two-dimensional electron gas FET,” IEEE Trans. Electron Device, vol. ED-29, pp. 955–959, 1982.
-
(1982)
IEEE Trans. Electron Device
, vol.ED-29
, pp. 955-959
-
-
Delagebeaudeuf, D.1
Linh, N.2
|