A surrounding gate transistor (SGT) cell for 64/256 Mbit DRAMs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1989, Pages 23-26

  Sunouchi, K ^a   Takato, H ^a   Okabe, N ^a   Yamada, T ^a   Ozaki, T ^a   Inoue, S ^a   Hashimoto, K ^a   Hieda, K ^a   Nitayama, A ^a   Horiguchi, F ^a   Masuoka, F ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; TRANSISTORS, FIELD EFFECT;

DRAM; SILICON ISLAND; SURROUNDING GATE TRANSISTOR; THREE-DIMENSIONAL MEMORY;

DATA STORAGE, DIGITAL;

EID: 0024870892     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)