The Effect of High Fields on MOS Device and Circuit Performance

IEEE Transactions on Electron Devices

Volumn 31, Issue 10, 1984, Pages 1386-1393

  Sodini, Charles G ^a   Ko, Ping Keung ^b   Moll, John L ^c  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; INTEGRATED CIRCUITS - PERFORMANCE;

DRAIN CURRENT; SATURATION DRAIN VOLTAGE; TRANSCONDUCTANCE;

SEMICONDUCTOR DEVICES, MOS;

EID: 0021501347     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21721     Document Type: Article

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