A Single-Piece C-Continuous Mosfet Model Including Subthreshold Conduction

IEEE Electron Device Letters

Volumn 12, Issue 10, 1991, Pages 565-567

  Mcandrew, Colin C ^a   Bhattacharyya, Bijan K ^a   Wing, Omar ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b Och Spine at New York Presbyterian Hospitals   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUBES, TRIODE;

SINGLE-PIECE CONTINUOUS MOSFET MODEL; SUBTHRESHOLD CONDUCTION; SUBTHRESHOLD-TRIODE BOUNDARY;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026237181     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.119190     Document Type: Article

References (6)

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3. G. T. Wright, “Physical and CAD models for the implanted-channel VLSI MOSFET,” IEEE Trans. Electron Devices, vol. ED-34, no. 4, pp. 823–33, Apr. 1987.
4. S. Veeraraghavan, “SSIM: A new charge-based MOSFET model,” presented at the MCNC Circuit Simulation Workshop, Nov. 1990.
5. H.-J. Park, P. K. Ko, and C. Hu, “A charge sheet capacitance model of short channel MOSFET's for SPICE,” IEEE Trans. Computer-Aided Design, vol. 10, no. 3, pp. 376–89, Mar. 1991.
6. S.-W. Lee and R. C. Rennick, “A compact IGFET MODEL—ASIM,” IEEE Trans. Computer-Aided Design, vol. 7, pp. 952–975, Sept. 1988.