High-performance Ga0.51in0.49P/GaAs airbridge gate MISFET's grown by Gas-Source MBE

IEEE Transactions on Electron Devices

Volumn 44, Issue 6, 1997, Pages 921-929

  Lin, Yo Sheng ^a   Lu, Shey Shi ^a   Wang, Yo Jen ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MICROWAVES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

AIRBRIDGE GATE STRUCTURE; GAS SOURCE ELECTRON BEAM EPITAXY (GSMBE);

MISFET DEVICES;

EID: 0031166727     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.585536     Document Type: Article

References (19)

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