A Two-Layer Microwave FET Structure for Improved Characteristics

IEEE Transactions on Electron Devices

Volumn 24, Issue 6, 1977, Pages 757-761

  Das, Mukunda B ^a   Esqueda, Paul ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0017503261     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1977.18817     Document Type: Article

References (10)

1. W. Baechtold et al, “Si and GaAs 0.5 μm-gate Schottky-barrier field-effect transistors,” Electron. Lett., vol. 9, pp. 232-234, 1973.
2. H. C. Huang et al, “GaAs MESFET performance,” presented at the Int. Electron Devices Meet., Washington, DC, 1975.
3. K. Lehovec and R. Zuleeg, “Voltage-current characteristics of GaAs J-FET's in the hot electron range,” Solid-State Electron., vol. 13, pp. 1415-1426, 1970.
4. W. Baechtold, “Noise behavior GaAs field-effect transistors with short gate lengths,” IEEE Trans. Electron Devices, vol. ED-19, pp. 674-680,1972.
5. H. Statz, H. A. Haus, and R. A. Pucel, “Noise characteristics of gallium arsenide field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-21, pp. 549-562,1974.
6. K. Lehovec and R. S. Miller, “Field distribution in junction field-effect transistors at large drain voltages,” IEEE Trans. Electron Devices, vol. ED-12, pp. 273-281,1975.
7. F. N. Trofimenkoff, “Field-dependent mobility analysis of the field-effect transistor,” Proc. IEEE, vol. 53, pp. 1765-1766,1965.
8. H. Beneking et al, “GaAs Mes FET with two-layer channel,” paper presented at ESSDERC, Grenoble, 1975.
9. M. B. Das and P. Schmidt, “High-frequency limitations of abrupt-junction FET's,” IEEE Trans. Electron Devices, vol. ED-20, pp. 779-792,1973.
10. T. L. Chiu and H. N. Ghosh, “Characteristics of the junction-gate field-effect transistor with short channel length,” Solid-State Electron., vol. 14, pp. 1307-1317, 1971.