Buried Channel GaAs MESFETʼns—Scattering Parameter and Linearity Dependence on the Channel Doping Profile

IEEE Transactions on Electron Devices

Volumn 28, Issue 9, 1981, Pages 1065-1070

  Dekkers, Jozef J ^a   Ponse, Frederin ^a   Beneking, Heinz ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS - DOPING;

TRANSISTORS, FIELD EFFECT;

EID: 0019614098     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1981.20486     Document Type: Article

References (13)

1. H. Beneking, J.J.M. Dekkers, and M. Heyen, “GaAs MESFET with two layer channel,” presented at European Solid State Device Res. Conf., Grenoble, France, 1975.
2. M. B. Das and P. Esqueda, “A two-layer microwave FET structure for improved characteristics,” IEEE Trans. Electron Devices, vol. ED-24, pp. 757–761, June 1977.
3. A. Nagashima, S. Umebachi, and G. Kano, “Calculation of microwave performance of buffer layer gate MESFET's,” IEEE Trans. Electron Devices, vol. ED-25, pp. 537–539, May 1978.
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8. U.S. Patent 3 693 055, priority date: Jan. 15, 1970.
9. F. Ponse and J. J. M. Dekkers, “Two-dimensional lateral transmission line MESFET model,” to be published.
10. W. Hilberg, Characteristische Größen elektrischer Leitungen. Stuttgart, Germany: Verlag Berliner Union, 1973, p. 114.
11. M. Buiatti and F. Marcelia, “Optimization of an ion implanted layer for GaAs FET's based on a numerical solution of the Poission's equation for the layer,” presented at 6th European Specialist Workshop on Active Microwave Semiconductor Devices, 1980, Darmstadt, F.R.G.
12. J. Sone and Y. Takayama, “A small-signal analytical theory for GaAs FET's at large drain voltages,” IEEE Trans. Electron Devices, vol. ED-25, pp. 329–337, Mar. 1978.
13. J. A. Higgins and R. L. Kuvas, “Analysis and improvement of intermodulation distortion in GaAs Power FET's,” IEEE Trans. Microwave Theory Tech., vol. MTT-28, pp. 9–17, Jan. 1980.