Calculation of Microwave Performance of Buffer Layer Gate GaAs MESFET's

IEEE Transactions on Electron Devices

Volumn 25, Issue 5, 1978, Pages 537-539

  Nagashima, Atsushi ^a   Umebachi, Shotaro ^a   Kano, Gota ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES;

TRANSISTORS, FIELD EFFECT;

EID: 0017971348     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1978.19123     Document Type: Article

References (8)

1. P. Wolf, “Microwave properties of Schottky-barrier field-effect transistors,” IBM J.Res. Develop., vol. 14, p. 125, 1970.
2. S. M. Sze and G. Gibbons, “Avalanche breakdown voltages of abrupt and linealy graded pn junctions in Ge, Si, GaAs and GaP,” Appl. Phys. Lett., vol. 8, p. 111, 1966.
3. B. R. Pruniaux, J. C. North, and A. V. Payer, “A self-insulated gate gallium arsenide field-effect transistor,” IEEE Trans. Electron Devices, vol. ED-19, p. 672, 1972.
4. H. M. Macksey, D. W. Shaw, and W. R. Wisseman, “GaAs power FET's with semi-insulated gates,” Electron. Lett., vol. 12, p. 193, 1976.
5. A. B. Grebene and S. K. Ghandhi, “General theory for pinched operation of the junction-gate FET,” Solid-State Electron., vol. 12, p. 573, 1969.
6. H. Statz, H. A. Haus, and R. A. Pucel, “Noise characteristics of gallium arsenide field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-21, p. 549, 1074.
7. K. Lehovec and R. Zuleeg, “Voltage-current characteristics of GaAs J-FET‘s in the hot electron range,” Solid-State Electron., vol. 13, p. 1415, 1970.
8. K. E. Drangeid, “Dynamic performance of Schottky-barrier field-effect transistors,” IBM J. Res. Develop., vol. 14, p. 82, 1970.