Device Linearity Improvement by Al0.3Ga0.7As/In0.2Ga0.8 As Heterostructure Doped-Channel FET's

IEEE Electron Device Letters

Volumn 16, Issue 1, 1995, Pages 33-35

  Chan, Yi Jen ^a   Yang, Ming Ta ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR GROWTH;

DOPED CHANNEL FIELD EFFECT TRANSISTORS; LINEARITY; PARALLEL CONDUCTION; PSEUDOMORPHIC HETEROSTRUCTURE;

FIELD EFFECT TRANSISTORS;

EID: 0029208268     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.363208     Document Type: Article

References (8)

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