Airbridged-Gate MESFET’s Fabricated by Isotropic Reactive Ion Etching

IEEE Transactions on Electron Devices

Volumn 40, Issue 10, 1993, Pages 1736-1739

  Hur, Katerina Y ^a   Compton, Richard C ^a  

^a School of Electrical Engineering Cornell University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CAPACITANCE; CAPACITANCE MEASUREMENT; CHARACTERIZATION; CHLORINE COMPOUNDS; ETCHING; GATES (TRANSISTOR); ION IMPLANTATION; PROCESS CONTROL; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

AIRBRIDGED GATE MESFET; ISOTROPIC REACTIVE ION ETCHING;

MESFET DEVICES;

EID: 0027677754     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.277328     Document Type: Article

References (11)

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