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Volumn , Issue , 1992, Pages 389-392
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Donor related deep traps in MOMBE Ga0.51In0.49P/GaAs heterostructures: Influence on the low temperature performance of HEMTs
a b a a c c |
Author keywords
[No Author keywords available]
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Indexed keywords
DEEP LEVEL TRANSIENT SPECTROSCOPY;
GALLIUM ALLOYS;
III-V SEMICONDUCTORS;
INDIUM ALLOYS;
INDIUM PHOSPHIDE;
INTEGRATED OPTOELECTRONICS;
PIXELS;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR ALLOYS;
SULFUR;
TEMPERATURE;
DOPANT SELECTION;
EFFECTIVE DOPING;
HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS);
HIGH FREQUENCY DEVICES;
HIGHLY-IONIZED;
LOW TEMPERATURE PERFORMANCE;
MATERIAL SYSTEMS;
SULFUR DOPING;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 85034141849
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ICIPRM.1992.235669 Document Type: Conference Paper |
Times cited : (6)
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References (11)
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