Improved Breakdown Voltage in GaAs MESFET's Utilizing Surface Layers of GaAs Grown at a Low Temperature by MBE

IEEE Electron Device Letters

Volumn 11, Issue 12, 1990, Pages 561-563

  Yin, L W ^a   Hwang, Y ^a   Lee, J H ^a   Kolbas, Robert M ^a   Trew, Robert J ^a   Mishra, Umesh K ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY - APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS - APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE - GROWTH;

GATE LEAKAGE SUPPRESSION; GATE-DRAIN BREAKDOWN VOLTAGE; LOW TEMPERATURE GALLIUM ARSENIDE;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0025590059     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.63040     Document Type: Article

References (9)

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