Alo.3Gao.7As/InxGa1-xAs (0 < × < 0.25) Doped-Channel Field-Effect Transistors (DCFET's)

IEEE Transactions on Electron Devices

Volumn 42, Issue 10, 1995, Pages 1745-1749

  Chan, Yi Jen ^a   Yang, Ming Ta ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; MICROWAVE DEVICES; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; PERFORMANCE; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM ARSENIDE; BIASED STRESS TESTINGS; DOPED CHANNEL FIELD EFFECT TRANSISTORS; ELECTRICAL CHARACTERIZATION; INDIUM GALLIUM ARSENIDE; INDIUM MOLE FRACTIONS; LATTICE MISMATCHED MATERIAL SYSTEM; STRAIN RELAXATION;

FIELD EFFECT TRANSISTORS;

EID: 0029391834     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.464424     Document Type: Letter

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