HIGH-CURRENT DRIVABILITY I-AlGaAs/N-GaAs DOPED-CHANNEL MIS-LIKE FET (DMT).

Electron device letters

Volumn EDL-7, Issue 11, 1986, Pages 625-626

  Hida, Hikaru ^a   Okamoto, Akihiko ^a   Toyoshima, Hideo ^a   Ohata, Keiichi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS - DOPING; SEMICONDUCTOR DEVICES - MILLIMETER WAVES;

DOPED-CHANNEL MIS-LIKE FET (DMT); ESTIMATED AVERAGE ELECTRON VELOCITY; HIGH-CURRENT DRIVE; TWO-DIMENSIONAL ELECTRON-GAS (2DEG) FET;

TRANSISTORS, FIELD EFFECT;

EID: 0022812335     PISSN: 01938576     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)