1.3-μm vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors

IEEE Photonics Technology Letters

Volumn 9, Issue 1, 1997, Pages 8-10

  Qian, Y ^a   Zhu, Z H ^a,b   Lo, Y H ^a   Hou, H Q ^c   Wang, M C ^d   Lin, W ^e  

^a Cornell University   (United States)

^b ZHEJIANG UNIVERSITY   (China)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d CHANG GUNG UNIVERSITY   (Taiwan)

^e CHUNGHWA TELECOM CO LTD   (Taiwan)

Author keywords

Long wavelength; Optical communications; Optical data interconnects; Semiconductor lasers; VCSEL's; Wafer bonding

Indexed keywords

CHARGE CARRIERS; OPTICAL COMMUNICATION; OPTICAL INTERCONNECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

BRAGG MIRRORS; LONG WAVELENGTH; SIDE MODE SUPPRESSION RATIO; SINGLE LONGITUDINAL MODE; VERTICAL CAVITY SURFACE EMITTING LASERS (VSCELS); WAFER BONDING;

SEMICONDUCTOR LASERS;

EID: 0030736344     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.554153     Document Type: Article

References (8)

1. Z. L. Liau and D. E. Mull, "Wafer fusion: A novel technique for optoelectronic device fabrication and monolithlic integration," Appl. Phys. Lett., vol. 58, no. 8, pp. 737-740, 1990.
2. Y. H. Lo, R. Bhat, D. M. Hwang, M. A. Koza, and T. P. Lee, "Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates," Appl. Phys. Lett., vol. 58, no. 18, pp. 1961-1963, 1991.
3. J. J. Dudley, D. I. Bablic, R. Mirin, L. Yang, B. I. Miller, R. J. Ram, T. Reynolds, E. L. Hu, and J. E. Bowers, "Low threshold, wafer fused long wavelength vertical cavity lasers," Appl. Phys. Lett., vol. 64, no. 12, pp. 1463-1465, 1994.
4. D. I. Babic, K. Streubel, R. P. Mirin, N. M. Margalit, J. E. Bowers, E. L. Hu, D. E. Mars, L. Yang, and K. Carey, "Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasers," IEEE Photon. Technol. Lett., vol. 7, pp. 1225-1228, 1995.
5. S. Uchiyama, N. Yokonchi, and T. Ninomiya, "Low threshold room temperature continuous wave operation of 1.3 μm GalnAsP/InP strained layer multiquantum well surface emitting lasers," Electron. Lett., vol. 32, no. 11, pp. 1011-1013, 1996.
6. 1-x-yAs/InP strained-layer quantum-well lasers for subsciber loop application," IEEE Quantum Electron., vol. 30, pp. 511-523, 1994.
7. N. M. Margalit, D. I. Babic, K. Streubel, R. P. Mirin, D. E. Mars, J. E. Bowers, and E. L. Hu, "Laterally oxided long wavelength CW vertical-cavity lasers," Appl. Phys. Lett., vol. 69, no. 4, pp. 471-473, 1996.
8. M. C. Wang, W. Lin, T. T. Shi, H. H. Liao, H. L. Chang, J. Y. Su, and Y. K. Tu, "Ultra-high temperature and ultra-high speed operation of 1.3 μm AlGaInAs/InP uncooled laser diodes," Electron. Lett., vol. 31, pp. p. 1584, Aug. 31, 1995.