Low-threshold proton-implanted 1.3-μm vertical-cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs bragg mirrors

IEEE Photonics Technology Letters

Volumn 9, Issue 7, 1997, Pages 866-868

  Qian, Y ^a   Zhu, Z H ^a,b   Lo, Y H ^a   Huffaker, D L ^c   Deppe, D G ^c   Hou, H Q ^d   Hammons, B E ^d   Lin, W ^e   Tu, Y K ^e  

^a Department of Population Medicine and Diagnostic Sciences   (United States)

^b ZHEJIANG UNIVERSITY   (China)

^c The University of Texas at Austin   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

^e CHUNGHWA TELECOM CO LTD   (Taiwan)

Author keywords

Ion implantation; Long wavelength lasers; Quantum wells; VCSEL's; Wafer bonding

Indexed keywords

CURRENT DENSITY; DIELECTRIC MATERIALS; GLASS BONDING; HETEROJUNCTIONS; ION IMPLANTATION; LOW TEMPERATURE OPERATIONS; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031185335     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.593326     Document Type: Article

References (10)

1. H. Soda, K. Iga, C. Kitahara, and Y. Suematsu. "GalnAsP/InP surface emitting injection lasers," Jpn. J. Appl. Phys., vol. 18, no. 12. pp. 2329-2330, 1979.
2. Z. L. Liau and D. E. Mull, "Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration," Appl. Phys. Lett., vol. 58, no. 8, pp. 737-740, 1990.
3. Y. H. Lo, R. Bhat, D. M. Hwang, M. A. Koza, and T. P. Lee, "Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates," Appl. Phys. Lett., vol. 58, no. 18, pp. 1961-1963, 1991.
4. N. M. Margalit, D. I. Babic, K. Streubel, R. P. Mirin, R. L. Maone, J. E. Bowers, and E. L. Hu, "Submilliamp long wavelength vertical cavity lasers," Electron. Lett., vol. 32, no. 18, pp. 1675-1676, 1996.
5. S. Uchiyama, N. Yokonchi, and T. Ninomiya, "Low threshold room temperature continuous wave operation of 1.3 μm GaInAsP/InP strained layer multiquantum well surface emitting lasers," Electron. Lett., vol. 32, no. 11, pp. 1011-1013, 1996.
6. Y. Qian, Z. H. Zhu, Y. H. Lo, H. Q. Hou, M. C. Wang, and W. Lin, "1.3 μm vertical-cavity surface-emitting lasers with double-bonded GaAs/AlAs Bragg mirrors," IEEE Photon. Technol. Lett., vol. 9, pp. 8-10, Jan. 1997.
7. C. H. Lin, C. L. Chua, Z. H. Zhu, F. E. Ejeckam, T. C. Wu, Y. H. Lo, and R. Bhat, "Optopumped long wavelength vertical-cavity surface-emitting lasers using strain-compensated multiple quantum wells," Appl. Phys. Lett., vol. 64, no. 25, pp. 3395-3397, 1994.
8. 1 - x - yAs/InP strained-layer quantum-well lasers for subscriber loop application," IEEE J. Quantum Electron., vol. 30, pp. 511-523, Feb. 1994.
9. 1 - x - y As for low threshold 1.3 μm and 1.5 μm quantum well lasers," in Proc. 4th Int. Conf. InP and Related Mater., Newport, RI, Apr. 1992, pp. 453-456, paper THD2.
10. K. L. Lear, S. P. Kilcoyne, and S. A. Chamers, "High power conversion efficiencies and scaling issues for multimode vertical-cavity top-surfacc-emitting lasers," IEEE Photon. Technol. Lett., vol. 6, pp. 778-781, July 1994.