Reliability studies of wafer-bonded InGaAs P-I-N photodetectors on GaAs substrates

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn , Issue , 1996, Pages 492-

  Ejeckam, F E ^a   Chua, C L ^a   Zhu, Z H ^a   Lo, Y H ^a   Hong, M ^a   Mannaerts, J P ^a   Bhat, R ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRONIC EQUIPMENT TESTING; ELECTRONICS PACKAGING; ELECTROSTATICS; HIGH TEMPERATURE OPERATIONS; PHOTODIODES; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL CYCLING;

AGING TEST; DARK CURRENTS; DEVICE DEGRADATION; ETCHED MESA STRUCTURE; WAFER BONDING;

PHOTODETECTORS;

EID: 0029700878     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)