Neutron radiation effects in high electron mobility transistors

IEEE Transactions on Electron Devices

Volumn 44, Issue 3, 1997, Pages 364-372

  Papastamatiou, M ^a   Arpatzanis, Nikos ^a   Papaioannou, G J ^a   Papastergiou, C ^a   Christou, A ^a  

^a UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC POWER SUPPLIES TO APPARATUS; FAILURE ANALYSIS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NEUTRONS; RADIATION EFFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

BUFFER LAYER DEGRADATION; CHARGE CONTROL MODEL; DEEP TRAPS; DONOR LAYER; LOGIC INVERTERS; NEUTRON RADIATION EFFECTS; THRESHOLD VOLTAGE SWING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031103666     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.556145     Document Type: Article

References (28)

1. R. J. Krantz, W. Bloss, and M. J. O'Loughin, "High energy irradiation effects in GaAs modulation-doped field effect transistors (MODFET's): Threshold voilage." IEEE Trans. Nucl. Sci., vol. 35, p. 1438-1443, 1988.
2. B. K. Janousek, R. J. Krantz, W. E. Bloss, W. E. Yamada, S. Brown, R. L. Rernke, and S. Witmer, "Characteristics of GaAs heterojunction FET's (HFET's) and source follower FET logic (SFFE) inverters exposed to high energy neutrons," IEEE Trans. Nucl. Sci., vol. 36, pp. 2223-2228, 1989.
3. W. T. Anderson, M. Simons, W. F. Tseng, J. A. Herb, and S. Bandy, "Transient radiation effects in AlGaAs/GaAs MODFETs," IEEE Trans. Nucl. Sci., vol. NS-34, pp. 1669-1675, 1987.
4. AFOSR Research Grant Project 90-0086 Rep., unpublished.
5. M. S. Shur, GaAs Devices and Circuits, I. Brodie and J. J. Murray, Eds. New York: Plenum, 1986.
6. G. J. Papaioannou, M. Papastamatiou, and A. Christou, "He ion radiation effects in HEMT's," J. Appl. Phys.. vol. 78, pp. 3066-3076, 1995.
7. J. F. Ziegler, J. P. Biersack, and U. Eittmark, The Stopping and Range of Ions in Solids. New York: Pergamon, 1987, p. 120.
8. E. Dupont-Nivet and M. Pasquali, "Neutron effects on HEMT devices," in RADECS 91. pp. 189-193.
9. G. Papaioannou, M. Papastamatiou, N. Arpatzanis, P. Dimitrakis, and C. Papastergiou, "Neutron radiation effects in HEMT," in RADECS 93, pp. 207-212. [10] D. C. Eook, Electrical Characterization of GaAs Materials and Devices.
10. Eondon: Wiley, 1989.
11. D. C. Eook and G. B. Norris, "Classical magnetoresistance measurements in AlzGai-zAs/GaAs MODFET structures: determination of mobilities," Solid State Electron., vol. 29, pp. 159-165, 1986.
12. G. Bastard, "Wave mechanics applied to semiconductor heterostruc-tures," Editions des Physique, ch. 6., 1989.
13. A. Jorio, M. Parenteau, M. Aubin, C. Carlone, S. M. Khana, and J. W. Gerdes, "A mobility study of the radiation-induced order effect in Gallium Arsenide," IEEE Trans. Nucl. Sci., vol. 41, pp. 1937-1944, 1994.
14. O. Y. Borkovskaya, N. E. Dmitruk, R. V. Konakova, and V. G. Eitovchencko, "Spatial localization of random-stimulated gettering effects," Sov. Phys.-Semicond., vol. 18, pp. 1176-1178, 1984.
15. O. Y. Borkovskaya, N. E. Dmitruk, V. G. Eitovchencko, and O. N. Mishchuk, "Model of the random-stimulated ordering effect in III-V semiconductors," Sov. Phys.-Semicond., vol. 23, pp. 129-132, 1989.
16. S. M. Khana, C. Rebej, A. Jorio, M. Parenteau, C. Carlone, and J. W. Gerdes, "Electron and neutron radiation-induced order effect in Gallium Arsenide," IEEE Trans. Nucl. Sci., vol. 40, pp. 1350-1359, 1993.
17. M. Tomizawa, K. Yokoyama, and A. Yoshii, "Hot-electron velocity characteristics of AlGaAs/GaAs heterostructures," IEEE Electron Device Lett., vol. EDL-5, pp. 464-465, 1984.
18. N. J. Berg and A. G Lieberman, "The effects of radiation-induced displacement damage on impurity conduction in GaAs," J. Appl. Phys., vol. 46, pp. 3475-3482, 1975.
19. P. Roblin, L. Rice, S. Bibyk, and H. Morkoc, "Nonlinear parasitics in MODFET's and MODFET I-V characteristics," IEEE Trans. Electron Devices, vol. 35, pp. 1207-1214, 1988.
20. H. Hida, T. Itoh, and K. Ohada, "A novel 2-DEGFET model based on the parabolic velocity-field curve approximation," IEEE Trans. Electron Devices, vol. ED-33, pp. 1580-1586, 1986.
21. M. O'Loughlin, "Radiation effects in high electron mobility transistors: Total dose gamma irradiation," IEEE Trans. Nucl. Sci., vol. NS-34, pp. 1808-1811, 1987.
22. R. J. Krantz and W. L. Bloss, "The role of unintentional acceptor concentration on the threshold voltage of modulation-doped field effect trasnistors," IEEE Trans. Electron Devices, vol. 36, pp. 451-453, 1989.
23. M. O. Watanabe, J. Yoshida, M. Mashita, T. Nakanisi, and A. Hojo, "Band discontinuity for GaAs/AlGaAs heterojunction determined by C-V profiling technique," J. Appl. Phys., vol. 57, pp. 5340-5344, 1985.
24. A. F. Behle and R. Zuleeg, "Fast neutron tolerance of GaAs JFET's operating in the hot electron range," IEEE Trans. Electron Devices, vol. ED-19, pp. 993-997, 1972.
25. G. M. Martin, E. Esteve, P. Langlade, and S. Makram-Ebeid, "Kinetics of formation of the midgap donor EL2 in neutron-irradiatied GaAs materials," J. Appl. Phys., vol. 56, pp. 2655-2657, 1984.
26. R. Magno, M. Spencer, J. G. Geissner, and E. R. Weber, "Transient capacitance measurements on neutron-irradiated GaAs," L. C. Kimerling and J. M. Parsey, Jr., Eds., in 13th Int. Conf. Defects in Semiconductors (ICDS) 1984, p. 981-987.
27. R. Worner, U. Kaufman, and J. Schneider, "Electron spin resonance of AsGa antisite defects in fast neutron irradiated GaAs," Appl. Phys. Lett., vol. 40, pp. 141-143, 1982.
28. Y. Song, M. E. Kim, A. K. Oki, M. E. Hafizi, W. D. Murlin, J. B. Camou, and K. W. Kobayashi, "Effects of neutron irradiation on GaAs/AlGaAs heterojunction bipolar transistors," IEEE Trans. Nucl. Sci., vol. 36, pp. 2155-2160, 1989.