High Energy Neutron Irradiation Effects in GaAs Modulation-Doped Field Effect Transistors (MODFETs): Threshold Voltage

IEEE Transactions on Nuclear Science

Volumn 35, Issue 6, 1988, Pages 1438-1443

  Krantz, R J ^a   Bloss, W L ^a   O'Loughlin, M J ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NEUTRONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES--HETEROJUNCTIONS;

ELECTRON TRAPPING; FERMI LEVEL; THRESHOLD VOLTAGE SHIFTS;

TRANSISTORS, FIELD EFFECT;

EID: 0024175360     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25477     Document Type: Article

References (13)

1. Dingle, M. D. Feuer, and C. W. Tu, “The Selectively Doped Heterostructure Transistor: Materials, Devices, and Circuits,” in VLSI Electronics: Microstructure Science, eds. N. G. Einspruch and W. R. Wisseman (Academic Press, New York 1985), Chapter 6.
2. P. M. Solomon and H. Morkoc, “Modulation-Doped GaAs/AlGaAs Heterojunction Field-Effect Transistors (MODFETs), Ultrahigh-Speed Device for Supercomputers,” IEEE Trans. Electron Devices, ED-31, 1015–1027 (Aug. 1984).
3. M. Abe et al. “GaAs VLSI Technology for High-Speed Computers,” in VLSI Electronics: Microstructure Science, eds. N. G. Einspruch and W. R. Wisseman (Academic Press, New York 1985), Ch. 9.
4. M. N. Yoder, “Military Applications of GaAs Integrated Circuits,” in VLSI Electronics: Microstructure Science, eds. N. G. Einspruch and W. R. Wisseman (Academic Press, New York 1985), Ch. 10.
5. D. Delagebeaudeuf and N. T. Linh, “Metal-(n)AlGaAs-GaAs Two-Dimensional Electron Gas FET,” IEEE Trans. Electron Devices, ED-29, 955–960, (June 1982).
6. H. L. Stormer, “Electron Mobilities in Modulation-Doped GaAs-(AlGa)As Heterostructures,” Surface Science, 132, 519–526, (1983).
7. L. W. Aukerman, “Radiation-Produced Energy Levels in Compound Semiconductors,” J. Appl. Phys. 30, 1239–1243, (Aug. 1959).
8. L. W. Aukerman, “Radiation Effects,” in Semiconductors and Semimetals: Physics of III-V Compounds, ed. R. K. Willardson and A. C. Beer (Academic Press, New York 1968), Chapter 6.
9. R. K. Willardson, “Transport Properties in Silicon and Gallium Arsenide,” J. Appl. Phys. 30, 1158–1165, (Aug. 1959).
10. J. R. Crawford, Jr. and J. W. Cleland, “Nature of Bombardment Damage and Energy Levels in Semiconductors,” J. Appl. Phys. 30, 1204–1213, (Aug. 1959).
11. V. C. Burkig, J. L. McNichols, and W. S. Ginell, “Infrared Absorption in Neutron-Irradiated GaAs,” J. Appl. Phys. 40, 3268–3273, (July 1969).
12. H. J. Stein, “Electrical Studies of Low-Temperature Neutron- and Electron-Irradiated Epitaxial n-type GaAs,” J. Appl. Phys. 40, 5300–5307, (Dec. 1969).
13. R. Zuleeg, “Radiation Effects in GaAs Integrated Circuits,” in VLSI Electronics: Microstructure Science, eds. N. G. Einspruch and W. R. Wisseman (Academic Press, N. Y. 1985), Ch. 11.