Hot-Electron Velocity Characteristics at AlGaAs/GaAs Heterostructures

IEEE Electron Device Letters

Volumn 5, Issue 11, 1984, Pages 464-465

  Tomizawa, M ^a   Yokoyama, K ^a   Yoshii, A ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HOT-ELECTRON VELOCITY;

SEMICONDUCTOR DEVICES;

EID: 0021520683     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1984.25989     Document Type: Article

References (6)

1. T. Mimura, S. Hiyamizu, T. Fujii, and K. Nanbu, “A new field transistor with selectively doped GaAs/n-AlxGa1-xAs heterojunctions,” Japan J. Appl. Phys., vol. 19, pp. L225-L227, 1980.
2. P. J. Price, “Two-dimensional electron transport in semiconductor layers, I. Phonon scattering,” Ann. Phys., vol. 33, pp. 217-239, 1981; also “semiconductor layers, II. Screening,” J. Vac. Sci. Technol., vol. 19, pp. 599-603, 1981.
3. K. Hess, “Impurity and phonon scattering in layered structures,” Appl. Phys. Lett., vol. 35, pp. 484-486, 1979.
4. A. Yoshii, M. Tomizawa, and K. Yokoyama, “Accurate modeling for submicrometer-gate Si and GaAs MESFET's using two-dimensional particle simulation,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1376-1380, 1983.
5. T. J. Drummond, M. Keever, W. Kopp, H. Morkoç, K. Hess, B. G. Streetman, and A. Y. Cho, “Field Dependence of Mobility in Al0.2Ga0.8As/GaAs heterojunctions at very low fields,” Electron. Lett., vol. 17, pp. 545-547, 1981.
6. M. Inoue, S. Hiyamizu, M. Inayama, and Y. Inuishi, “Analyses of 2D electron transport at a GaAs/AlGaAs interface,” in Proc. 14th Conf. Solid State Devices (Tokyo, Japan), Japan. J. Appl. Phys., vol. 22, supple., pp. 357-363, 1982.