Radiation effects in high electron mobility transistors: Total dose gamma irradiation

IEEE Transactions on Nuclear Science

Volumn 34, Issue 6, 1987, Pages 1808-1811

  Loughlin, Michael J O ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 30244526255     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1987.4337560     Document Type: Article

References (8)

1. see for example, R. Dingle, M.D. Feuer and C.W. Tu in, “VLSI Electronics, Vol. 11”, N.G. Etnspruch and W.R. Wisseman, eds., New York, Academic Press, 1985, Ch. 6
2. M. Abe, T. Mimura, K. Nishiuchi, A. Shibatomi and M. Kobayashi, “Recent Advances in Ultra-High-Speed HEMT Technology”, IEEE J. Quantum Electronics, Vol. QE-22, No. 9, pp. 1870–1879, Sept. 1986.
3. M.A. Listvan, P.J. Vold, and D.K. Arch, “Ionizing Radiation Response of GaAs Heterostructure Technologies”, 1987 Device Research Conference, Santa Barbara, CA, June 1987.
4. D.C. Tsui, A.C. Gossard and G.J. Dolan, “Radiation Effects on Modulation-Doped GaAs-AlGaAs Heterostructures”, Appl. Phys. Lett., Vol. 42, No. 2, pp.180-182, Jan. 1983.
5. R.E. Williams, “Gallium Arsenide Processing Techniques”, Dedham, MA, Artech House Inc., 1985, Ch. 18.
6. J.C. Garth, E.A. Burke, and S. Woolf, “Displacement Damage and Dose Enhancement in Gallium Arsenide and Silicon”, IEEE Trans. Nucl. Sci, Vol. NS-32, No. 6, pp. 4382–4387, Dec. 1987.
7. R. Zuleeg in, “VLSI Electronics, Vol. 11”, N.G. Einspruch and W.R. Wisseman, eds., New York, Academic Press, 1985, Ch. 11.
8. Y. Takanashi, M. Hirano, and T. Sugeta, “Control of Threshold Voltage of AlGaAs/GaAs 2 DEG FET's Through Heat Treatment”, IEEE Elect. Dev. Lett., Vol. EDL-5, No. 7, pp. 241–243, July 1984.