Effects of neutron irradiation on GaAs/AlGaAs heterojunction bipolar transistors

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 2155-2160

  Song, Y ^a   Kim, M B ^a   Oki, A K ^a   Hafizi, M E ^a   Murlin, W D ^a   Camou, J B ^a   Kobayashi, K W ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; MOLECULAR BEAM EPITAXY; NEUTRONS;

FUNCTIONAL DEPENDENCE; MESSENGER-SPRATT RELATION;

TRANSISTORS, BIPOLAR;

EID: 0024936484     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45418     Document Type: Article

References (11)

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2. Y. Song, et al. “Radiation Hardness Characteristics of GaAs/AlGaAs HBTs,” to be presented at 1989 IEEE GaAs IC Symposium, San Diego, CA, Oct. 1989.
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8. N. Osaake, et al., “Emitter-Base Junction Size Effects on Current Gain HFE of AlGaAs/GaAs Heterojuntion Bipolar Transistors,” Japan J. Appl. Phys. Lett., vol 245, pp. 1596–598, 1985.
9. W. E. Spicer et al., “New and Unified Model for Schottky Barrier and III-V Insulator Interface Statees Formation,” J. Vac. Sci. Tech. vol. 16, pp. 1422–1433, 1979.
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