The Role of Unintentional Acceptor Concentration on the Threshold Voltage of Modulation-Doped Field-Effect Transistors

IEEE Transactions on Electron Devices

Volumn 36, Issue 2, 1989, Pages 451-453

  Krantz, Richard J ^a   Bloss, Walter L ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; SEMICONDUCTING GALLIUM COMPOUNDS--DOPING; SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER;

MODFETS; POISSON EQUATION; THRESHOLD VOLTAGE; THRESHOLD VOLTAGE/ACCEPTOR DENSITY; UNINTENTIONAL ACCEPTOR DOPING;

TRANSISTORS, FIELD EFFECT;

EID: 0024610568     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.19950     Document Type: Article

References (11)

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