-
1
-
-
0021588996
-
Low noise HEMT with self-aligned gate structure
-
Aug.
-
K. Joshin, Y. Yamashita, M. Niori, J. Saito, T. Mimura, and M. Abe, “Low noise HEMT with self-aligned gate structure,” in Proc. 16th Int. Conf. Solid State Devices and Materials, pp. 347–350, Aug. 1984.
-
(1984)
Proc. 16th Int. Conf. Solid State Devices and Materials
, pp. 347-350
-
-
Joshin, K.1
Yamashita, Y.2
Niori, M.3
Saito, J.4
Mimura, T.5
Abe, M.6
-
2
-
-
0021580483
-
+-gate and selectively doped structure
-
May
-
+-gate and selectively doped structure,” in IEEE MTT-S Int. Microwave Symp. Dig., pp. 434–436, May 1984.
-
(1984)
IEEE MTT-S Int. Microwave Symp. Dig.
, pp. 434-436
-
-
Ohata, K.1
Hida, H.2
Miyamoto, H.3
Ogawa, M.4
Baba, T.5
Mizutani, T.6
-
3
-
-
0021616946
-
Low noise high electron mobility transistors
-
May
-
J. J. Berenz, K. Nakano, and K. P. Weller, “Low noise high electron mobility transistors,” in IEEE MTT-S Int. Microwave Symp. Dig., pp. 98–101, May 1984.
-
(1984)
IEEE MTT-S Int. Microwave Symp. Dig.
, pp. 98-101
-
-
Berenz, J.J.1
Nakano, K.2
Weller, K.P.3
-
4
-
-
1542302246
-
Extremely low noise 0.25 μm gate HEMTs,” presented at the
-
Sept.
-
K. Kamei, H. Kawasaki, S. Hori, K. Shibata, M. Higashiura, M. O. Watanabe, and Y. Ashizawa, “Extremely low noise 0.25 μm gate HEMTs,” presented at the 12th Int. Symp. GaAs and Related Compounds, Sept. 1985.
-
(1985)
12th Int. Symp. GaAs and Related Compounds
-
-
Kamei, K.1
Kawasaki, H.2
Hori, S.3
Shibata, K.4
Higashiura, M.5
Watanabe, M.O.6
Ashizawa, Y.7
-
5
-
-
0022243514
-
Planar AlGaAs/GaAs selectively doped structure with high performances and high stabilities
-
Sept.
-
H. Hida, H. Miyamoto, K. Ohata, T. Itoh, T. Baba, and M. Ogawa, “Planar AlGaAs/GaAs selectively doped structure with high performances and high stabilities,” in Proc. 11th Int. Symp. GaAs and Related Compounds, pp. 551–556, Sept. 1984.
-
(1984)
Proc. 11th Int. Symp. GaAs and Related Compounds
, pp. 551-556
-
-
Hida, H.1
Miyamoto, H.2
Ohata, K.3
Itoh, T.4
Baba, T.5
Ogawa, M.6
-
6
-
-
0022188859
-
Ultra low noise and high frequency microwave operation of FETs made by MBE
-
Sept.
-
M. Laviron, D. Delagebeaudeuf, J. F. Rochette, P. R. Jay, F. Delescule, J. Chevrier, and N. Y. Linh, “Ultra low noise and high frequency microwave operation of FETs made by MBE,” in Proc 11th Int. Symp. GaAs and Related Compounds, pp. 539–543, Sept. 1984.
-
(1984)
Proc 11th Int. Symp. GaAs and Related Compounds
, pp. 539-543
-
-
Laviron, M.1
Delagebeaudeuf, D.2
Rochette, J.F.3
Jay, P.R.4
Delescule, F.5
Chevrier, J.6
Linh, N.Y.7
-
7
-
-
0022010888
-
Low noise high electron mobility transistors for monolithic microwave integrated circuits
-
Feb.
-
A. K. Gupta, E. A. Sovero, R. L. Pierson, R. D. Stein, R. T. Chen, D. L. Miller, and J. A. Higgins, “Low noise high electron mobility transistors for monolithic microwave integrated circuits,” IEEE Electron Device Lett., vol. EDL-6, no. 2, pp. 81–82, Feb. 1985.
-
(1985)
IEEE Electron Device Lett.
, vol.EDL-6
, Issue.2
, pp. 81-82
-
-
Gupta, A.K.1
Sovero, E.A.2
Pierson, R.L.3
Stein, R.D.4
Chen, R.T.5
Miller, D.L.6
Higgins, J.A.7
-
8
-
-
0022028919
-
Microwave performance of 0.25-μm gate length high electron mobility transistors
-
Mar.
-
U. K. Mishra, S. C. Palmateer, P. C. Chao, P. M. Smith, and J. C. M. Hwang, “Microwave performance of 0.25-μm gate length high electron mobility transistors,” IEEE Electron Device Lett., vol. EDL-6, no. 3, pp. 142–145, Mar. 1985.
-
(1985)
IEEE Electron Device Lett.
, vol.EDL-6
, Issue.3
, pp. 142-145
-
-
Mishra, U.K.1
Palmateer, S.C.2
Chao, P.C.3
Smith, P.M.4
Hwang, J.C.M.5
-
9
-
-
84949080515
-
New device structure for 4 Kb HEMT SRAM
-
Oct.
-
S. Kuroda, T. Mimura, M. Suzuki, N. Kobayashi, A. Shibatomi, and M. Abe, “New device structure for 4 Kb HEMT SRAM,” in IEEE GaAs IC Symp. Tech. Dig., pp. 162–165, Oct. 1983.
-
(1983)
IEEE GaAs IC Symp. Tech. Dig.
, pp. 162-165
-
-
Kuroda, S.1
Mimura, T.2
Suzuki, M.3
Kobayashi, N.4
Shibatomi, A.5
Abe, M.6
-
10
-
-
0021640354
-
Realization of sub-10 picosecond switching times in selectively doped (Al, Ga)As/GaAs heterostructure transistors.” in
-
Dec.
-
R. H. Hendel, S. S. Pei, C. W. Tu, B. J. Roman, N. J. Shah, and R. Dingle, “Realization of sub-10 picosecond switching times in selectively doped (Al, Ga)As/GaAs heterostructure transistors.” in IEDM Tech. Dig., pp. 857–858, Dec. 1984.
-
(1984)
IEDM Tech. Dig.
, pp. 857-858
-
-
Hendel, R.H.1
Pei, S.S.2
Tu, C.W.3
Roman, B.J.4
Shah, N.J.5
Dingle, R.6
-
11
-
-
0022111018
-
+-(Al, Ga)As/GaAs FETs
-
Aug.
-
+-(Al, Ga)As/GaAs FETs,” Electron. Lett., vol. 21, no. 17, pp. 772–773, Aug. 1985.
-
(1985)
Electron. Lett.
, vol.21
, Issue.17
, pp. 772-773
-
-
Cirillo, N.C.1
Abrokwah, J.K.2
Fraash, A.M.3
Vold, P.J.4
-
12
-
-
0022101366
-
Modeling for an AlGaAs/GaAs heterostructure device using Monte Carlo simulation
-
July
-
M. Tomizawa, A. Yoshii, and K. Yokoyama, “Modeling for an AlGaAs/GaAs heterostructure device using Monte Carlo simulation,” IEEE Electron Device Lett., vol. EDL-6, no. 7, pp. 332-334, July 1985.
-
(1985)
IEEE Electron Device Lett.
, vol.EDL-6
, Issue.7
, pp. 332-334
-
-
Tomizawa, M.1
Yoshii, A.2
Yokoyama, K.3
-
13
-
-
0022079882
-
Two-dimensional transient simulation of an idealized high electron mobility transistor
-
June
-
D. J. Widiger, I. C. Kizilyalli, K. Hess, and J. J. Coleman, “Two-dimensional transient simulation of an idealized high electron mobility transistor,” IEEE Trans. Electron Devices, vol. ED-32, no. 6, pp. 1092–1102, June 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, Issue.6
, pp. 1092-1102
-
-
Widiger, D.J.1
Kizilyalli, I.C.2
Hess, K.3
Coleman, J.J.4
-
14
-
-
0020140054
-
Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
-
June
-
D. Delagebeaudeuf and N. T. Linh, “Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET,” IEEE Trans. Electron Devices, vol. ED-29, no. 6, pp. 955–960, June 1982.
-
(1982)
IEEE Trans. Electron Devices
, vol.ED-29
, Issue.6
, pp. 955-960
-
-
Delagebeaudeuf, D.1
Linh, N.T.2
-
15
-
-
0020717268
-
Current-voltdge and capacitance-voltage characteristics of modulation-doped field-effect transistors
-
Mar.
-
K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoç, “Current-voltdge and capacitance-voltage characteristics of modulation-doped field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-30, no. 3, pp. 207–212, Mar. 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, Issue.3
, pp. 207-212
-
-
Lee, K.1
Shur, M.S.2
Drummond, T.J.3
Morkoç, H.4
-
16
-
-
0021204462
-
Parasitic MESFET in (Al, Ga)As/GaAs modulation doped FET's and MODFET characterization
-
Jan.
-
—, “Parasitic MESFET in (Al, Ga)As/GaAs modulation doped FET's and MODFET characterization,” IEEE Trans. Electron Devices, vol. ED-31, no. 1, pp. 29–35, Jan. 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, Issue.1
, pp. 29-35
-
-
Lee, K.1
Shur, M.S.2
Drummond, T.J.3
Morkoç, H.4
-
17
-
-
0022102704
-
A new model for modulation-doped FET's
-
Aug.
-
C. Z. Cil and S. Tansal, “A new model for modulation-doped FET's,” IEEE Electron Device Lett., vol. EDL-6, no. 8, pp. 434–436, Aug. 1985.
-
(1985)
IEEE Electron Device Lett.
, vol.EDL-6
, Issue.8
, pp. 434-436
-
-
Cil, C.Z.1
Tansal, S.2
-
18
-
-
0019595943
-
0.8As/GaAs heterojunctions at very low fields
-
July
-
0.8As/GaAs heterojunctions at very low fields,” Electron. Lett., vol. 17, no. 15, pp. 545, July 1981.
-
(1981)
Electron. Lett.
, vol.17
, Issue.15
, pp. 545
-
-
Drummond, T.J.1
Keever, M.2
Kopp, W.3
Morkoç, H.4
Hess, K.5
Streetman, B.G.6
Cho, A.Y.7
-
19
-
-
84926564824
-
Hot electron effects in a 2D electron gas at GaAs/AlGaAs nter-face
-
Oct.
-
M. Inoue, S. Hiyamizu, H. Hida, H. Hashimoto, and Y. Inuishi, “Hot electron effects in a 2D electron gas at GaAs/AlGaAs nter-face,” in Proc. 3rd Int. Conf. Hot Carriers in Semiconductors (Montpellier, France, 1981), also J. de Phys. Suppl., vol. C7, p. 19, Oct. 1982.
-
(1982)
Proc. 3rd Int. Conf. Hot Carriers in Semiconductors (Montpellier, France, 1981), also J. de Phys. Suppl.
, vol.C7
, pp. 19
-
-
Inoue, M.1
Hiyamizu, S.2
Hida, H.3
Hashimoto, H.4
Inuishi, Y.5
-
20
-
-
0016872730
-
Accurate two sections model for MOS transistor in saturation
-
P. Rossel, H. Martinot, and G. Vassilieff, “Accurate two sections model for MOS transistor in saturation,” Solid-State Electron., vol. 19, pp. 51–56, 1976.
-
(1976)
Solid-State Electron.
, vol.19
, pp. 51-56
-
-
Rossel, P.1
Martinot, H.2
Vassilieff, G.3
-
21
-
-
0022120352
-
Two-dimensional simulation of MODFET and GaAs gate heterojunction FET's
-
Sept.
-
J. Y. F. Tang, “Two-dimensional simulation of MODFET and GaAs gate heterojunction FET's,” IEEE Trans. Electron Devices, vol. ED-32, no. 9, pp. 1817–1823, Sept. 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, Issue.9
, pp. 1817-1823
-
-
Tang, J.Y.F.1
-
22
-
-
84949081146
-
Analytical modeling of 2DEGFET's
-
Sept.(in Japanese).
-
H. Hida, T. Itoh, and K. Ohata, “Analytical modeling of 2DEGFET's,” in Proc. 44th Autumn Meeting of the Japan Soc. Appl. Phys., p. 501, Sept. 1983 (in Japanese).
-
(1983)
Proc. 44th Autumn Meeting of the Japan Soc. Appl. Phys.
, pp. 501
-
-
Hida, H.1
Itoh, T.2
Ohata, K.3
|