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Volumn 33, Issue 10, 1986, Pages 1580-1586

A Novel 2DEGFET Model Based on the Parabolic Velocity-Field Curve Approximation

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EID: 3142750401     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22710     Document Type: Article
Times cited : (21)

References (22)
  • 8
    • 0022028919 scopus 로고
    • Microwave performance of 0.25-μm gate length high electron mobility transistors
    • Mar.
    • U. K. Mishra, S. C. Palmateer, P. C. Chao, P. M. Smith, and J. C. M. Hwang, “Microwave performance of 0.25-μm gate length high electron mobility transistors,” IEEE Electron Device Lett., vol. EDL-6, no. 3, pp. 142–145, Mar. 1985.
    • (1985) IEEE Electron Device Lett. , vol.EDL-6 , Issue.3 , pp. 142-145
    • Mishra, U.K.1    Palmateer, S.C.2    Chao, P.C.3    Smith, P.M.4    Hwang, J.C.M.5
  • 10
    • 0021640354 scopus 로고
    • Realization of sub-10 picosecond switching times in selectively doped (Al, Ga)As/GaAs heterostructure transistors.” in
    • Dec.
    • R. H. Hendel, S. S. Pei, C. W. Tu, B. J. Roman, N. J. Shah, and R. Dingle, “Realization of sub-10 picosecond switching times in selectively doped (Al, Ga)As/GaAs heterostructure transistors.” in IEDM Tech. Dig., pp. 857–858, Dec. 1984.
    • (1984) IEDM Tech. Dig. , pp. 857-858
    • Hendel, R.H.1    Pei, S.S.2    Tu, C.W.3    Roman, B.J.4    Shah, N.J.5    Dingle, R.6
  • 12
    • 0022101366 scopus 로고
    • Modeling for an AlGaAs/GaAs heterostructure device using Monte Carlo simulation
    • July
    • M. Tomizawa, A. Yoshii, and K. Yokoyama, “Modeling for an AlGaAs/GaAs heterostructure device using Monte Carlo simulation,” IEEE Electron Device Lett., vol. EDL-6, no. 7, pp. 332-334, July 1985.
    • (1985) IEEE Electron Device Lett. , vol.EDL-6 , Issue.7 , pp. 332-334
    • Tomizawa, M.1    Yoshii, A.2    Yokoyama, K.3
  • 13
    • 0022079882 scopus 로고
    • Two-dimensional transient simulation of an idealized high electron mobility transistor
    • June
    • D. J. Widiger, I. C. Kizilyalli, K. Hess, and J. J. Coleman, “Two-dimensional transient simulation of an idealized high electron mobility transistor,” IEEE Trans. Electron Devices, vol. ED-32, no. 6, pp. 1092–1102, June 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , Issue.6 , pp. 1092-1102
    • Widiger, D.J.1    Kizilyalli, I.C.2    Hess, K.3    Coleman, J.J.4
  • 14
    • 0020140054 scopus 로고
    • Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
    • June
    • D. Delagebeaudeuf and N. T. Linh, “Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET,” IEEE Trans. Electron Devices, vol. ED-29, no. 6, pp. 955–960, June 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , Issue.6 , pp. 955-960
    • Delagebeaudeuf, D.1    Linh, N.T.2
  • 15
    • 0020717268 scopus 로고
    • Current-voltdge and capacitance-voltage characteristics of modulation-doped field-effect transistors
    • Mar.
    • K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoç, “Current-voltdge and capacitance-voltage characteristics of modulation-doped field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-30, no. 3, pp. 207–212, Mar. 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , Issue.3 , pp. 207-212
    • Lee, K.1    Shur, M.S.2    Drummond, T.J.3    Morkoç, H.4
  • 16
    • 0021204462 scopus 로고
    • Parasitic MESFET in (Al, Ga)As/GaAs modulation doped FET's and MODFET characterization
    • Jan.
    • —, “Parasitic MESFET in (Al, Ga)As/GaAs modulation doped FET's and MODFET characterization,” IEEE Trans. Electron Devices, vol. ED-31, no. 1, pp. 29–35, Jan. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , Issue.1 , pp. 29-35
    • Lee, K.1    Shur, M.S.2    Drummond, T.J.3    Morkoç, H.4
  • 17
    • 0022102704 scopus 로고
    • A new model for modulation-doped FET's
    • Aug.
    • C. Z. Cil and S. Tansal, “A new model for modulation-doped FET's,” IEEE Electron Device Lett., vol. EDL-6, no. 8, pp. 434–436, Aug. 1985.
    • (1985) IEEE Electron Device Lett. , vol.EDL-6 , Issue.8 , pp. 434-436
    • Cil, C.Z.1    Tansal, S.2
  • 20
    • 0016872730 scopus 로고
    • Accurate two sections model for MOS transistor in saturation
    • P. Rossel, H. Martinot, and G. Vassilieff, “Accurate two sections model for MOS transistor in saturation,” Solid-State Electron., vol. 19, pp. 51–56, 1976.
    • (1976) Solid-State Electron. , vol.19 , pp. 51-56
    • Rossel, P.1    Martinot, H.2    Vassilieff, G.3
  • 21
    • 0022120352 scopus 로고
    • Two-dimensional simulation of MODFET and GaAs gate heterojunction FET's
    • Sept.
    • J. Y. F. Tang, “Two-dimensional simulation of MODFET and GaAs gate heterojunction FET's,” IEEE Trans. Electron Devices, vol. ED-32, no. 9, pp. 1817–1823, Sept. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , Issue.9 , pp. 1817-1823
    • Tang, J.Y.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.