-
1
-
-
0022733701
-
-
June
-
T.J. Drummond, W.T. Masselink, and H. Morkoc, Proc. IEEE, Vol. 74, No. 6, pp. 773–822, June 1986.
-
(1986)
Proc. IEEE
, vol.74
, Issue.6
, pp. 773-822
-
-
Drummond, T.J.1
Masselink, W.T.2
Morkoc, H.3
-
2
-
-
0023042325
-
-
5th June
-
K.H.G. Duh, P.C. Chao, P.M. Smith, L.F. Lester, and B.R. Lee, Electronics Letters, Vol. 22, No. 12, pp. 647–649, 5th June 1986.
-
(1986)
Electronics Letters
, vol.22
, Issue.12
, pp. 647-649
-
-
Duh, K.H.G.1
Chao, P.C.2
Smith, P.M.3
Lester, L.F.4
Lee, B.R.5
-
4
-
-
0019635014
-
-
Nov.
-
M. Simons, E.E. King, W.T. Anderson, and H.M. Day, J. Appl. Phys. 52, pp. 6630–6636, Nov. 1981.
-
(1981)
J. Appl. Phys.
, vol.52
, pp. 6630-6636
-
-
Simons, M.1
King, E.E.2
Anderson, W.T.3
Day, H.M.4
-
5
-
-
0020271827
-
-
Dec.
-
W.T. Anderson, Jr., M. Simons, E.E. King, H.B. Dietrich, and R.J. Lambert, IEEE Trans. on Nucl. Sci. NS-29, pp. 1533–1538, Dec. 1982.
-
(1982)
IEEE Trans. on Nucl. Sci.
, vol.NS-29
, pp. 1533-1538
-
-
Anderson, W.T.1
Simons, M.2
King, E.E.3
Dietrich, H.B.4
Lambert, R.J.5
-
7
-
-
4244062620
-
Queisser and D.E. Theodorou, Phys. Rev
-
15 March
-
H.J. Queisser and D.E. Theodorou, Phys. Rev. B, Vol. 33, pp. 4027–4033, 15 March 1986.
-
(1986)
Phys. Rev. B
, vol.33
, pp. 4027-4033
-
-
Queisser, H.J.1
Theodorou, D.E.2
-
9
-
-
0022881837
-
-
IEEE, NY
-
K. Tabatabaie-Alavi, B.W. Black, and S.E. Bernaki, 1986 GaAs IC Symp. Technical Digest, pp. 137–140. (IEEE, NY, 1986).
-
(1986)
1986 GaAs IC Symp. Technical Digest.
, pp. 137-140
-
-
Tabatabaie-Alavi, K.1
Black, B.W.2
Bernaki, S.E.3
-
11
-
-
84939067161
-
-
Inst. Phys. Conf. Ser. Chap.10, Int. Symp. GaAs and Related Compounds
-
M. Takikawa, K. Joshin, Y. Hirachi, and A. Shibatomi, Effects of Surface State and DX Center on Low Frequency Transconductance of High-Electron-Mobility Transistor, Inst. Phys. Conf. Ser. No. 79, Chap. 10, Int. Symp. GaAs and Related Compounds, 1985.
-
(1985)
Effects of Surface State and DX Center on Low Frequency Transconductance of High-Electron-Mobility Transistor
, Issue.79
-
-
Takikawa, M.1
Joshin, K.2
Hirachi, Y.3
Shibatomi, A.4
-
13
-
-
0001577844
-
-
Chap 7, Deep Centers in Semiconductors, Edited by (Gordon and BreachNew York
-
D.V. Lang, DX Centers in III-V Alloys, Chap 7, Deep Centers in Semiconductors, Edited by S.T. Pantelides, (Gordon and Breach, New York, 1986).
-
(1986)
DX Centers in III-V Alloys
-
-
Lang, D.V.1
Pantelides, S.T.2
-
14
-
-
0020732747
-
-
J. Vac. Sci. Technology Apr-June
-
K. Yamanaka, S. Naritsuka, M. Mannoh, T. Yuasa, Y. Nomura, M. Mihara, and M. Ishü, Influence of Growth Conditions and Alloy Composition on Deep Electron Traps of n-Alx. Ga1-x As Grown by MBE, J. Vac. Sci. Technology B2(2), pp. 229–232, Apr-June 1984.
-
(1984)
Influence of Growth Conditions and Alloy Composition on Deep Electron Traps of n-Alx. Ga1-x As Grown by MBE
, vol.B2
, Issue.2
, pp. 229-232
-
-
Yamanaka, K.1
Naritsuka, S.2
Mannoh, M.3
Yuasa, T.4
Nomura, Y.5
Mihara, M.6
Ishü, M.7
-
15
-
-
0022719772
-
-
Solid State Electronics
-
M. Henini, B. Tuck, C.J. Paull, Deep States in GaAs LEC Crystals, Solid State Electronics 29, 5, pp. 483–88, 1986.
-
(1986)
Deep States in GaAs LEC Crystals
, vol.29
, Issue.5
, pp. 483-488
-
-
Henini, M.1
Tuck, B.2
Paull, C.J.3
|