|
Volumn , Issue , 1985, Pages 981-987
|
TRANSIENT CAPACITANCE MEASUREMENTS ON NEUTRON IRRADIATED GALLIUM ARSENIDE.
a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
ELECTRIC FIELD EFFECTS;
NEUTRONS;
SEMICONDUCTING GALLIUM ARSENIDE - RADIATION EFFECTS;
SEMICONDUCTOR MATERIALS - DEFECTS;
SPECTROSCOPY, ELECTRON;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
NEUTRON IRRADIATION DEFECTS;
SCHOTTKY BARRIER SAMPLES;
ELECTRIC MEASUREMENTS;
|
EID: 0021788055
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (8)
|
References (9)
|