Multiple Sb ion implantation for deep-submicron pMOS channel doping

IEEE Transactions on Electron Devices

Volumn 44, Issue 3, 1997, Pages 448-454

  Suzuki, Kunihiro ^a   Satoh, Akira ^a   Sugii, Toshihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC POWER SUPPLIES TO APPARATUS; GATES (TRANSISTOR); MOSFET DEVICES; PERMITTIVITY; SEMICONDUCTING ANTIMONY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

CHANNEL DOPING TECHNOLOGY; DEEP SUBMICRON DEVICES; DOPING PROFILE; SHORT CHANNEL EFFECT; THRESHOLD VOLTAGE MODEL;

ION IMPLANTATION;

EID: 0031103559     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.556155     Document Type: Article

References (13)

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