Re-examination of indium implantation for a low power 0.1 μm technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 897-900

  Bouillon, P ^a   Benistant, F ^a   Skotnicki, T ^a   Guegan, G ^a   Roche, D ^a   Andre, E ^a   Mathiot, D ^a   Tedesco, S ^a   Martin, F ^a   Heitzmann, M ^a   Lerme, M ^a   Haond, M ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CMOS INTEGRATED CIRCUITS; CRYSTAL LATTICES; ELECTRIC RESISTANCE; ION IMPLANTATION; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC FORCE MICROSCOPY MEASUREMENT; BORON IMPLANTATION; FERMI-DIRAC STATISTICS; INDIUM IMPLANTATION; SHORT CHANNEL EFFECTS;

MOS DEVICES;

EID: 18244420220     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)