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Volumn , Issue , 1995, Pages 12-13
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Sub 0.1 μm SOI MOSFETs with counter doping into uniformly and heavily doped channel region
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CAPACITANCE;
ELECTRIC CURRENTS;
ELECTRON BEAM LITHOGRAPHY;
GATES (TRANSISTOR);
ION IMPLANTATION;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DOPING;
SILICON ON INSULATOR TECHNOLOGY;
SUBSTRATES;
THIN FILMS;
COUNTER DOPING;
ONE DIMENSIONAL POISSON EQUATION;
SHORT CHANNEL EFFECTS;
SOURCE DRAIN REGIONS;
MOSFET DEVICES;
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EID: 0029516573
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (3)
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References (0)
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