Comparison and Implications of Charge Collection Measurements in Silicon and InGaAs Irradiated by Energetic Protons and Neutrons

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1815-1822

  Normand, E ^a   Oberg, D L ^b   Wert, J L ^b   Majewski, P P ^b   Woffinden, G A ^c   Satoh, S ^d   Sasaki, K ^b   Tverskoy, M G ^e   Miroshkin, V V ^b   Goleminov, N ^f   Wender, S A ^g   Gavron, A ^b  

^a BOEING COMPANY   (United States)

^b Amdahl Corp ^*

^c Amdahl Corporation   (United States)

^d FUJITSU LABORATORIES LTD   (Japan)

^e Petersburg Nuclear Physics Institute   (United States)

^f NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^g LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; NEUTRONS; PHOTODIODES; PROTONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

CHARGE COLLECTION; SILICON SURFACE BARRIER DETECTORS;

RADIATION EFFECTS;

EID: 0029516455     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.488784     Document Type: Article

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