Burnout of power mos transistors with heavy ions of Californium-252

IEEE Transactions on Nuclear Science

Volumn 33, Issue 6, 1986, Pages 1710-1713

  Waskiewicz, A E ^a   Groninger, J W ^a   Strahan, V H ^a   Long, D M ^b  

^a Rockwell International   (United States)

^b SCIENCE APPLICATIONS INTERNATIONAL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 67650865931     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1986.4334670     Document Type: Article

References (8)

1. J. H. Stephen, T. K. Sanderson, D. Mapper, and J. Farren, “A Comparison of Heavy Ion Sources Used in Cosmic Ray Simulation Studies of VLSI Circuits,” IEEE Trans. Nucl. Sci., NS-31, No. 6, Dec. 1984, pp. 1069–1072.
2. J. H. Stephen, T. K. Sanderson, D. Mapper, M. Hardman, and J. Farren, “Investigation of Heavy Particle Induced Latch-Up, Using a Californium-252 Source,” IEEE Nucl. Sci., NS-31, No. 6, Dec. 1984, pp. 1207–1211.
3. J. C. Pickel, J. T. Blandford, Jr., A. E. Waskiewicz, and V. H. Strahan, Jr., “Heavy Ion Induced Permanent Damage in MNOS Gate Insulators,” IEEE Nucl. Sci., NS-32, No. 6, Dec. 1985, pp. 4176–4179.
4. W. A. Kolasinski, J. B. Blake, J. K. Anthony, W. E. Prine, and E. C. Smith, “Simulation of Cosmic Ray Induced Soft Errors and Latch-Up in Integrated Circuit Computer Memories,” IEEE Trans. Nucl. Sci., NS-26, No 6, Dec. 1979, pp. 5087–5091.
5. J. C. Pickel and J. T. Blandford, Jr., “Cosmic Ray Induced Errors in MOS Devices,” IEEE Nucl. Sci., NS-27, Dec. 1980, pp. 1006–1015.
6. J. T. Blandford and J. C. Pickel, “Use of Cf-252 to Determine Parameters for SEU Rate Calculations,” IEEE Trans. Nucl. Sci., NS-32, No. 6, Dec. 1985, pp. 4282–4286.
7. Personal communication with processing engineer, May 1986.
8. T. F. Wrobel, F. N. Coppage, G. L. Hash, “Current Induced Avalanche in Epitaxial Structures,” IEEE Nucl. Sci., NS-32, No. 6, Dec. 1985, pp. 3991–3995.