Charge collection in GaAs MESFET circuits using a high energy microbeam

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2897-2903

  Buchner, Sv ^a   Campbell, A B ^a   Weatherford, T ^b   Knudson, A ^b   McDonald, P ^c   McMorrow, D ^c   Fischer, B ^c   Metzger, S ^d   Schlogl M ^d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b GSI HELMHOLTZZENTRUM FÜR SCHWERIONENFORSCHUNG GMBH   (Germany)

^c SFA INC   (United States)

^d NAVAL POSTGRADUATE SCHOOL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; INTEGRATED CIRCUITS; ION BOMBARDMENT; LASER BEAMS; PULSED LASER APPLICATIONS; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE TESTING; TRANSIENTS;

CHARGE COLLECTION; SCANNING ION MICROPROBES; SINGLE EVENT UPSETS (SEU);

MESFET DEVICES;

EID: 0030365638     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556883     Document Type: Article

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