Implications of the Spatial Dependence of the Single-Event-Upset Threshold in SRAMS Measured with a Pulsed Laser

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2195-2202

  Buchner, S ^a   Langworthy, J B ^a   Stapor, W J ^a   Campbell, A B ^a   Rivet, S ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; BIT ERROR RATE; CARRIER CONCENTRATION; CELLULAR ARRAYS; CMOS INTEGRATED CIRCUITS; ENERGY TRANSFER; INTEGRATED CIRCUIT TESTING; IONS; LASER APPLICATIONS; LASER PULSES; RADIATION EFFECTS; RADIOACTIVITY MEASUREMENT;

CHARGE COLLECTION EFFICIENCY; INTERCELL UPSET THRESHOLD; SINGLE EVENT UPSET; STATIC RANDOM ACCESS MEMORY;

RANDOM ACCESS STORAGE;

EID: 0028705538     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340562     Document Type: Article

References (14)

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