Characteristics of buried-channel pMOS devices with shallow counter-doped layers fabricated using channel preamorphization

IEEE Transactions on Electron Devices

Volumn 43, Issue 3, 1996, Pages 444-449

  Miyake, Masayasu ^a   Okazaki, Yukio ^a   Kobayashi, Toshio ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS MATERIALS; CAPACITORS; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

CHANNEL PREAMORPHIZATION; FIELD EDGE STRUCTURE; GATE OXIDE; GETTERING EFFECTS OF DEFECTS; MOS CAPACITORS; SHALLOW COUNTER DOPED LAYERS; SHORT CHANNEL DEVICES;

MOSFET DEVICES;

EID: 0030110702     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485659     Document Type: Article

References (12)

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