Sub-Quarter-Micrometer Gate-Length p-Channel MOSFET’s with Shallow Boron Counter-Doped Layer Fabricated Using Channel Preamorphization

IEEE Transactions on Electron Devices

Volumn 37, Issue 9, 1990, Pages 2007-2014

  Miyake, Masayasu ^a   Kobayashi, Toshio ^a   Okazaki, Yukio ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; HEAT TREATMENT--ANNEALING; SEMICONDUCTING FILMS;

CHANNEL PREAMORPHIZATION; RAPID THERMAL ANNEALING;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025486395     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.57163     Document Type: Article

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