Electrical Properties of Preamorphized and Rapid Thermal Annealed Shallow p+n Junctions

Journal of the Electrochemical Society

Volumn 135, Issue 11, 1988, Pages 2872-2876

  Miyake, Masayasu ^a   Aoyama, Shinji ^a   Hirota, Shoichi ^a   Kobayashi, Toshio ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES--JUNCTIONS; SEMICONDUCTOR MATERIALS--ELECTRIC PROPERTIES;

ANNEALING TIME; BORON DEPTH PROFILES; JUNCTION DIODES; PREAMORPHIZATION; RAPID THERMAL ANNEALING; SHALLOW JUNCTIONS;

INTEGRATED CIRCUITS, VLSI;

EID: 0024106862     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2095451     Document Type: Article

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