An alternate pre-amorphization/rapid thermal annealing procedure for shallow junction formation

Journal of the Electrochemical Society

Volumn 131, Issue 4, 1984, Pages 943-945

  Chu, W K ^c   Wortmann, J J ^b   Rozgonyi, G A ^b  

^a MCNC   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF NORTH CAROLINA   (United States)

Author keywords

damage; Ge; implantation; rapid thermal annealing; SIMS; TEM

Indexed keywords

GERMANIUM AND ALLOYS;

ANNEALING; IMPLANTATION;

SILICON AND ALLOYS;

EID: 0021408231     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2115733     Document Type: Article

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