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Journal of the Electrochemical Society

Volumn 137, Issue 9, 1990, Pages 2860-2866

Formation of Shallow Boron-Doped Layer for Channel Doping Using Preamorphization

(1) Miyake, Masayasu a

a NTT CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON--DIFFUSION; SEMICONDUCTOR DEVICES, MOSFET; SEMICONDUCTOR MATERIALS--DOPING;

CHANNEL DOPING; PREAMORPHIZATION; RAPID THERMAL ANNEALING;

SEMICONDUCTING SILICON;

EID: 0025482544 PISSN: 00134651 EISSN: 19457111 Source Type: Journal
DOI: 10.1149/1.2087089 Document Type: Article

Times cited : (10)

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