High-field step-stress and long term stability of PHEMTs with different gate and recess lengths

Microelectronics Reliability

Volumn 42, Issue 9-11, 2002, Pages 1587-1592

  Cova, P ^a   Menozzi, R ^a   Dammann, M ^b   Feltgen, T ^b   Jantz, W ^b  

^a UNIVERSITY OF PARMA   (Italy)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC MATERIALS; MICROELECTRONICS;

ALGAAS/INGAAS/GAAS; DEVICE RELIABILITY; DRAIN VOLTAGE; ELEVATED TEMPERATURE; HIGH TEMPERATURE; LONG TERM STABILITY; RECESS LENGTHS; SAFE OPERATION;

ALUMINUM GALLIUM ARSENIDE;

EID: 0013320720     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00195-6     Document Type: Conference Paper

References (13)

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