Influence of layout and packaging on the temperature of GaAs power PHEMTs

1998 28th European Microwave Conference, EuMC 1998

Volumn 2, Issue , 1998, Pages 439-442

  Marsetz, W ^a   Dammann, M ^a   Kawashima, H ^b   Rudiger, J ^a   Matthes, B ^a   Hulsmann, A ^a   Schlechtweg, M ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b HOSEI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE;

DEVICE LAYOUT; DEVICE TEMPERATURE; GAAS; OPERATING TEMPERATURE; THREE DIMENSIONAL SIMULATIONS;

SEMICONDUCTING GALLIUM;

EID: 84897485119     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1998.338193     Document Type: Conference Paper

References (5)

1. Paul W. Webb,Thermal Modeling of Power Gallium Arsenide Microwave Integrated Circuits", IEEE Transactions on Electron Devices, Vol. 40, No. 5, May 1993
2. Thomas A. Midford, John J. Wooldridge, and Rick L. Sturdivant, The Evolution of Packages for Monolithic Microwave and Millimeter-Wave Circuits", IEEE Transactions on Antennas and Propagation, Vol. 43, No. 9, September 1995
3. Xiang Gui, Paul W. Webb, and Guang-bo Gao,, ,Use of the Three-Dimensional TLM Method in the Thermal Simulation and Design of Semiconductor Devices", EEEE Transactions on Electron Devices, Vol. 39, No. 6, June 1992
4. W. Marsetz, A. Htilsmann, T. Kleindienst, S. Fischer, M. Demmler, W.Bronner, T. Fink, K. Köhler, M. Schlechtweg,High Performance Double Recessed AMO.2GaO.8As/IIj25GaO.75As PHEMTs for Microwave Power Applications", 1997, 27th EuMC, pp. 1030-1034
5. William J. Roesch,Thermo-Reliability Relationships of GaAs ICs", 1988, IEEE GaAs IC Symposium, pp. 61-64