Positron annihilation study of defects in boron implanted silicon

Journal of Applied Physics

Volumn 87, Issue 11, 2000, Pages 7685-7691

  Huang, M B ^a,b   Myler, U ^a,c   Simpson, P J ^a   Mitchell, I V ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c Hamilton Regional Cancer Center   (New Zealand)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006777074     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373441     Document Type: Article

References (34)

1. P. A. Stolk et al, J. Appl. Phys. 81, 6031 (1997), and references therein.
2. P. J. Schultz and K. G. Lynn, Rev. Mod. Phys. 60, 701 (1988).
3. P. Asoka-Kumar, K. G. Lynn, and D. O. Welch, J. Appl. Phys. 76, 4935 (1994).
4. D. W. Lawther and P. J. Simpson, Defect Diffus. Forum 138/139, 1 (1996).
5. A. Uedono and S. Tanigawa, Appl. Phys. Lett. 53, 25 (1988).
6. S. Eichler et al., Phys. Rev. B 56, 1393 (1997).
7. P. J. Simpson, A. P. Knights, R. D. Goldberg, G. C. Aers, and D. Landheer, Appl. Surf. Sci. 116, 211 (1997).
8. M. B. Huang, T. W. Simpson, and I. V. Mitchell, Appl. Phys. Lett. 70, 1146 (1997).
9. G. C. Aers, AIP Conf. Proc. 218, 162 (1990).
10. J. P. Biersack and L. G. Haggmark, Nucl. Instrum. Methods 174, 257 (1980).
11. A. Uedono, S. Tanigawa, J. Sugiura, and M. Ogasawara, Jpn. J. Appl. Phys., Part 1 28, 1293 (1989).
12. A. Uedono, S. Tanigawa, J. Sugiura, and M. Ogasawara, Jpn. J. Appl. Phys., Part 1 29, 1867 (1990).
13. S. Coff, V. Privitera, F. Priolo, S. Libertino, and G. Mannino, J. Appl. Phys. 81, 1639 (1997).
14. G. D. Watkins, in Radiation Effects in Semiconductors, edited by F. L. Vook (Plenum, New York, 1968), p. 67.
15. K. Kyllesbech Larsen, V. Privitera, S. Coff, F. Priolo, S. U. Campisano, and A. Carnera, Phys. Rev. Lett. 76, 1493 (1995).
16. V. Privitera, S. Coff, F. Priolo, K. Kyllesbech Larsen, and G. Mannino, Appl. Phys. Lett. 68, 3422 (1996).
17. V. Avalos and S. Dannefaer, Phys. Rev. B 58, 1331 (1998).
18. A. Uedono, L. Wei, C. Dosho, Y. Tabuki, H. Kondo, S. Tanigawa, and M. Tamura, Mater. Sci. Forum 105-110, 1471 (1992).
19. G. D. Watkins, in Electronic Structure and Properties of Semiconductors, Materials Science and Technology Vol. 4, edited by W. Schroeter (VCH, Weinheim, 1992), p. 105.
20. K. L. Brower and W. Beexhold, J. Appl. Phys. 34, 3295 (1963).
21. U. Zammit, K. N. Madhusoodanan, M. Marinelli, F. Scudieri, R. Pizzoferrato, F. Mercuri, E. Wendler, and W. Wesch, Phys. Rev. B 49, 14322 (1994).
22. A. Polity, F. Börner, S. Huth, S. Eichler, and R. Krause-Rehberg, Phys. Rev. B 58, 10363 (1998).
23. W. Puff, S. Dannefaer, P. Mascher, and D. Kerr, Phys. Status Solidi 102, 527 (1987).
24. K. S. Jones, J. Liu, L. Zhang, V. Krishnamoorthy, and R. T. DeHoff, Nucl. Instrum. Methods Phys. Res. B 106, 227 (1995).
25. M. B. Huang and I. V. Mitchell, J. Appl. Phys. 85, 174 (1999).
26. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989).
27. F. Priolo, G. Mannino, M. Miccichè, V. Privitera, E. Napolotani, and A. Carnera, Appl. Phys. Lett. 72, 3011 (1998).
28. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
29. H.-J. Gossmann, in Delta-doping of Semiconductors, edited by E. F. Schubert (Cambridge University Press, Cambridge, 1996), p. 253.
30. M. J. Caturla, M. D. Johnson, and T. D. de la Rubia, Appl. Phys. Lett. 72, 2736 (1998).
31. J. P. de Souza and H. Boudinov, Appl. Phys. Lett. 66, 3173 (1995).
32. G. Z. Pan and K. N. Tu, J. Appl. Phys. 82, 601 (1997).
33. R. A. Brown, O. Kononchuk, G. A. Rozgonyi, S. Koveshnikov, A. P. Knights, P. J. Simpson, F. Gonzalez Source, J. Appl. Phys. 84, 2459 (1998).
34. P. J. Simpson, M. Spooner, H. Xia, and A. P. Knights, J. Appl. Phys. 85, 1765 (1999).