Intrinsic electric fields in silicon

Applied Surface Science

Volumn 116, Issue , 1997, Pages 211-214

  Simpson, P J ^a   Knights, A P ^a   Goldberg, R D ^a   Aers, G C ^b   Landheer, D ^b  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; FERMI LEVEL; INTERFACES (MATERIALS); IRRADIATION;

POSITRON DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0031547659     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)01056-2     Document Type: Article

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