Enhanced depth resolution in positron analysis of ion irradiated SiO2 films

Journal of Applied Physics

Volumn 85, Issue 3, 1999, Pages 1765-1770

  Simpson, P J ^a   Spooner, M ^a   Xia, H ^a   Knights, A P ^a,b  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0142112424     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369321     Document Type: Article

References (18)

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4. See e.g., Ionizing Radiation Effects in MOS Devices and Circuits, edited by T. P. Ma and P. V. Dressendorfer (Wiley, New York, 1989).
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6. For reviews of the technique see P. Asoka-Kumar, K. G. Lynn, and D. O. Welch, J. Appl. Phys. 76, 4935 (1994); D. W. Lawther and P. J. Simpson, Defect Diffus. Forum 138/139, 1 (1996).
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