Tetrahedral carbons

Current Opinion in Solid State and Materials Science

Volumn 4, Issue 1, 1999, Pages 34-38

  Zellama, Kacem ^a  

^a Universite de Picardie Jules Verne   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002795719     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-0286(99)80008-4     Document Type: Article

References (46)

1. Robertson J: Gap states in diamond-like amorphous carbon. Phil Mag B 1997, 76:335-350. An interesting review on the electronic structure of amorphous diamond-like carbon films is given in this paper. A description of the density of states, taking into account the localized as well as dangling bond states density, is presented and used to interpret some optical properties of the films.
2. Freire FL Jr, Franceschini DF: Structural and mechanical properties of hard amorphous carbon-nitrogen films obtained by plasma decomposition of methane-ammonia mixtures. Thin Solid Films 1997, 293:236-243.
3. 2 ratio is also found to play an important role on these properties.
4. 2 ratio, for different types of films.
5. 2.
6. 3 bonding content are found to be greatly influenced by ion bombardment.
7. Schultz PA, Stechel EB: Effects of basis set quality on the prediction of structures, energies and properties of amorphous tetrahedral carbon. Phys Rev B 1998, 57:3295-3304. The authors present a detailed theoretical study in order to find the best set of calculation parameters which may describe correctly the predicted structure of tetrahedral amorphous carbon films. Different models of calculation have been considered to fully describe the local structure (local bonding and topology) of the films. Fairly good correlations with the experimental data are observed.
8. 4-plasma source. Diam Relat Mater 1998, 7:695-698.
9. Conway NMJ, Milne WI, Robertson J: Electronic properties and doping of hydrogenated amorphous carbon films. Diam Relat Mater 1998, 7:477-481.
10. 2 clustering sites on the field emission properties are discussed.
11. Robertson J: Amorphous carbon cathodes for field emission display. Thin Solid Films 1997, 296:61-65. The author presents a comparative investigation performed on different materials, such as diamond, DLC (a-C:H) and tetrahedral amorphous carbon (ta-C) used for the fabrication of field emission displays (FEDs). He demonstrates that the DLC a-C:H and ta-C films are good candidates for FED fabrication owing to their low election affinity.
12. Anders S, Diaz J, Agerill Joel W, Yulo R, Bogy Davis B: Thermal stability of amorphous hard carbon films produced by cathodic arc deposition. Appl Phys Lett 1997, 71:3367-3369.
13. 2 ratio are in fairly good agreement with those determined by EELS measurements, which are rather sophisticated experiments.
14. Zeinert A, Racine B, Zellama K, Zarrabian M, Turban G, Sadki A: Comparative study of optical and structural properties of a-C:H films deposited by conventional diode and microwave ECR assisted rf plasma methods. Diam Relat Mater 1998, 7:486-490.
15. 3 bonding in tetrahedral amorphous carbon films is presented in this paper. The study is based on the use of UV Raman spectroscopy, and there is a good correlation with the observations from EELS and the methods presented in [13] and [17].
16. 3 bonding in tetrahedral amorphous carbon using ultraviolet Raman spectroscopy. Appl Phys Lett 1997, 70:1980-1982.
17. Merkulov VI, Lannin JS, Munro CH, Asher SA, Milne WI: UV studies of tetrahedral bonding in diamondlike amorphous carbon. Phys Rev Lett 1997, 78:4869-4872.
18. Lee J, Collins RW, Veerasamy VS, Robertson J: Analysis of amorphous carbon thin films by spectroscopic ellipsometry. J Non-Cryst Solids 1998, 227-230:617-621.
19. 3 bonding content) is also investigated as a function of the argon ion flux and carbon atom flux ratio. The density of defects (i.e. dangling bonds) is determined and found to be a consequence of Ar ion bombardment.
20. Friedmann TA, Sullivan JP, Knapp KA, Tallant DR, Follstaedt DM, Medlin DL, Mirkarimi PB: Thick stress-free amorphous tetrahedral carbon films with hardness near that of diamond. Appl Phys Lett 1997, 71:3820-3822. An original way to deposit thick stress-free tetrahedral amorphous carbon films is presented in this paper. The intrinsic stress in the films is reduced by a short annealing time (-2 min) of the film at 600°C. This temperature is, however, quite high preventing the use of glass substrates, which are very useful for low cost electronic devices fabrications.
21. Chhowalla M, Robertson J, Chen CW, Silva SRP, Davis CA, Amaratunga GAJ, Milne Wl: Influence of the ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films. J Appl Phys 1997, 81:139-145.
22. Benlahsen M, Béranger V, Henocque J, Badawi F, Zellama K: The effect of hydrogen evolution on the mechanical properties of hydrogenated amorphous carbon. Diam Relat Mater 1998, 7:769-773.
23. 3 bonding fraction.
24. Takada N, Arai K, Nitta S, Nonomura S: Preparation and properties of reactive-sputtered CNx films. Appl Surf Sci 1997, 113-114:274-277.
25. x films: the layer by-layer method. J Non-Cryst Solids 1998, 227-230:655-658.
26. Stich PK, Jungnickel G, Köhler T, Frauenheim T, Porezag D: P- and n-doping in carbon modifications. J Non-Cryst Solids 1998, 227-230:607-611.
27. 2 electronic configurations and the different types of related defects. However, further theoretical investigations are needed to get more insight into the behaviour of the defects with nitrogen as well as boron-doping.
28. 2 bonded forms of carbon. Phys Rev Lett B 1998, 57:R661-R665.
29. Hammer P, Victoria NM, Alvarez F: Hydrogen induced changes on the electronic structure of carbon nitride films. J Non-Cryst Solids 1998, 227-230:645-649.
30. Zhang S, Wang B, Tang JY: Processing and characterisation of diamond-like carbon films. Surf Eng 1997, 13:303-309.
31. Ivanov-Omskii Vl, Korobkov MP, Namozov BR, Smorgonskaya EA, Yasterbov SG: Bonded and non-bonded hydrogen in diamond like carbon. J Non-Cryst Solids 1998, 227-230:627-631.
32. Silva SRP, Robertson J, Amaratunga GAJ, Rafferty B, Brown LM, Schan J, Fransceschini DF, Mariotto G: Nitrogen modification of hydrogenated amorphous carbon films. J Appl Phys 1997, 81:2626-2634.
33. Zhang Q, Yoon SF, Rusli, Yang H, Ahu J: Influence of oxygen on the thermal stability of amorphous hydrogenated carbon films. J Appl Phys 1998, 83:1349-1353.
34. Bounouh Y, Zellama K, Zeinert A, Benlahsen M, Clin M, Thèye ML: Modes of hydrogen incorporation in hydrogenated amorphous carbon (a-C:H), modification with annealing temperature. J Phys III 1997, 7:2159-2164. The behaviour of the different hydrogen-bonding configurations is presented as a function of thermal annealing temperature, for a-C:H deposited at different substrate bias (i.e. ion energy bombardment) using IR measurements. A higher thermal stability is found for films deposited at a high ion energy owing to their more dense structure.
35. Gerstner EG, McKenzie DR: Fabrication and characterization of novel electronic devices using tetrahedral amorphous carbon. Diam Relat Mater 1998, 7:1172-1177. An alternative way to fabricate novel electronic devices using tetrahedral amorphous carbon thin films is proposed in this article. It provides the solution of using the films as they are (i.e. with relatively high density of gap states), as a means of producing nonvolatile digital information storage devices, based on the 'memory effect' of these materials due to nitrogen-doping.
36. 3 fraction and doping. The results obtained in this paper are in fairly good agreement with major results which have been previously obtained.
37. Missert N, Friedmann TA, Sullivan JP, Copeland RG: Characterisation of electron emission from planar amorphous carbon thin films using in situ scanning electron microscopy. Appl Phys Lett 1997, 70:1995-1997.
38. Hoffmann U, Weber A, Löhken T, Klages CP, Spaeth C, Richter F: Electron field emission of amorphous carbon. Diam Relat Mater 1998, 7:682-686.
39. Cheah LK, Shi X, Ray BK, Silva SRP, Sun Z: Field emission from undoped and nitrogen-doped tetrahedral amorphous carbon film prepared by filtered cathodic vacuum are technique. Diam Relat Mater 1998, 7:640-644. An interesting comparison between undoped and nitrogen-doped tetrahedral amorphous carbon films with respect to the field emission behavior is presented in this paper. Not only the doping but also the surface morphology of the film are found to strongly influence the emission current density and the field emission properties.
40. Satyanarayana BS, Hart A, Milne WI, Robertson J: Field emission from tetrahedral amorphous carbon. Appl Phys Lett 1997, 71:1430-1432.
41. Zhao JP, Wang X, Chen ZY, Yang SQ, Shi TS, Lui XH, Zou SC: Preparation of thin films by filtered arc deposition and ion assisted arc deposition. Nucl Instrum Meth Phys Res B 1997, 127-128:817-820.
42. Robertson J, Milne W: Band model for electron emission from diamond-like and diamond. J Non-Cryst Solids 1998, 227-230:558-564. The authors give a theoretical interpretation of the experimental data obtained for field emission and electron affinity in undoped and nitrogen-doped DLC films. It is based on the band-bonding model. It is suggested that nitrogen-doping decreases the emission barrier by increasing the bulk Fermi level and decreasing the work function.
43. 2 ratio. One should note, however, that this temperature is too high to use with 'plastic' substrates.
44. Robertson J, Rutter MJ: Band diagram of diamond and diamond-like carbon surfaces. Diam Relat Mater 1998, 7:620-625.
45. Chen ZY, Yu YH, Zhao JP, Wang X, Yang SQ, Shi TS, Liu XH: Surface morphology of nitrogen doped tetrahedral amorphous carbon on silicon by atomic microscopy imaging. Mater Lett 1998 34:1-4.
46. Silva SRP, Forrest RD, Munidradas DA, Amaratunga CAJ: Electron field emission from a-C:H films. Diam Relat Mater 1998, 7:645-650. The originality of this article is to demonstrate that standard hydrogenated amorphous carbon films prepared by a rf-PECVD technique also exhibit interesting electron emission properties, as for ta-C and ta-C:H films prepared by other methods. Consequently, they might be potential candidates for FED fabrication.