Structural characterization of thin GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

Applied Physics Letters

Volumn 73, Issue 26, 1998, Pages 3869-3871

  Yang, B ^a   Trampert, A ^a   Jenichen, B ^a   Brandt, O ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001490092     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122920     Document Type: Article

References (16)

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