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Volumn 89, Issue 6, 2001, Pages 822-832

The Future of Power Semiconductor Device Technology

Author keywords

Insulated gate bipolar transistors; Mosfets; Power electronics; Power integrated circuits; Power rectifiers; Power semiconductor devices; Schottky diodes; Silicon carbide; Smart power technology; Thyristors

Indexed keywords


EID: 0001520716     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/5.931471     Document Type: Article
Times cited : (133)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.