-
3
-
-
0028515751
-
"Low forward drop J3S rectifiers, fabricated using submicron tecnnology,"
-
[31 M. Mehrotra and B. J. Baliga, "Low forward drop J3S rectifiers, fabricated using submicron tecnnology," IEEE Trans. Electron Devices. vol. 4i, pp.1655-1660. 1994.
-
(1994)
IEEE Trans. Electron Devices.
, vol.4
, pp. 1655-1660
-
-
Mehrotra, M.1
Baliga, B.J.2
-
4
-
-
84908170026
-
"The low power dissipation Schottky oarrier diode with trench structure,"
-
S. Kuaori, j. Ishida, M. Tanska, M. Watanahe, and T. Kan, "The low power dissipation Schottky oarrier diode with trench structure," in IEEE Int. Svmo. Power Semiconductor Devices and ICs, 1992, pp. 66-71.
-
In IEEE Int. Svmo. Power Semiconductor Devices and ICs
, vol.1992
, pp. 66-71
-
-
Kuaori, S.1
Ishida, J.2
Tanska, M.3
Watanahe, M.4
Kan, T.5
-
5
-
-
84956219022
-
"Low leakage current Schottky harner diode,"
-
H. KoJ.aka, M. Takata, S. Murakami, and T. Yatsuo. "Low leakage current Schottky harner diode," in IEEE In:. S-;i,ip. Power Semiconductor Dei-ices ana ICs. 1992, pp. 80-83.
-
In IEEE In:. S-;i,ip. Power Semiconductor Dei-ices Ana ICs.
, vol.1992
, pp. 80-83
-
-
Kojaka, H.1
Takata, M.2
Murakami, S.3
Yatsuo, T.4
-
6
-
-
33646899332
-
"Schottky barrier rectifier with MOS trench,"
-
365 ',02, Nov. 15
-
M. Mehrotra and B. J. Baiiga, "Schottky barrier rectifier with MOS trench," U.S. Patent 5 365 ',02, Nov. 15, 1994.
-
(1994)
U.S. Patent
, vol.5
-
-
Mehrotra, M.1
Baiiga, B.J.2
-
7
-
-
0029290257
-
"Trench MOS barrier Schottky rectifier."
-
[7j _, "Trench MOS barrier Schottky rectifier." Solid Suite Electron.. vol. 38, pp. 801-806. 1995.
-
(1995)
Solid Suite Electron..
, vol.38
, pp. 801-806
-
-
-
8
-
-
33646921472
-
"Scholtkv barrier rectifiers and method of forming trie same,"
-
B. J. Balisa, "Scholtkv barrier rectifiers and method of forming trie same," L\S. Patent 5612567. Mar. 18, 1997.
-
(1997)
L\S. Patent 5612567. Mar.
, pp. 18
-
-
Balisa, B.J.1
-
9
-
-
0031621611
-
"A !ovv forward voltage drop high voltage trench MOS barrier Schoitty rectifier vvilh linearly graded doping profile." in
-
S. Mahalingam and B. j. Baliga, "A !ovv forward voltage drop high voltage trench MOS barrier Schoitty rectifier vvilh linearly graded doping profile." in IEEE Int. Hymn. Power Semiconductor Devices and ICs, 1998, pp. 187-190.
-
IEEE Int. Hymn. Power Semiconductor Devices and ICs
, vol.1998
, pp. 187-190
-
-
Mahalingam, S.1
Baliga, B.2
-
10
-
-
0017504430
-
"Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers,"
-
B. J. Baliga and E. Sun, "Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers," IEEE Trans. Electron Devices, vol. ED-24, pp. 685-688, 1977.
-
(1977)
IEEE Trans. Electron Devices, Vol. ED-24
, pp. 685-688
-
-
Baliga, B.J.1
Sun, E.2
-
11
-
-
0023422084
-
"Analysis of a high voltage merged P-i-N/Schottky (MPS) rectifier,"
-
B. J. Baliga, "Analysis of a high voltage merged P-i-N/Schottky (MPS) rectifier," IEEE Electron Device Lett., vol. EDL-8, pp. 407-409, 1987.
-
(1987)
IEEE Electron Device Lett., Vol. EDL-8
, pp. 407-409
-
-
Baliga, B.J.1
-
12
-
-
0024702631
-
"Improved recovery of fast power diodes with self-adjusting p emitter efficiency,"
-
H. Schlangenotto, J. Serafm, F. Sawitzki, and H. Maeder, "Improved recovery of fast power diodes with self-adjusting p emitter efficiency," IEEE Electron Device Lt-lt., vol. 10, pp. 322-324, 19S9.
-
(1989)
IEEE Electron Device Lt-lt
, vol.10
, pp. 322-324
-
-
Schlangenotto, H.1
Serafm, J.2
Sawitzki, F.3
Maeder, H.4
-
13
-
-
0034447094
-
"6.5kV ultra-soft and fast recovery diode (U-SFD) with high reverse recovery capability,"
-
M. Mori, H. Kobayashi, and Y. Yasuda, "6.5kV ultra-soft and fast recovery diode (U-SFD) with high reverse recovery capability," in IEEE /;?,. Svmp. Power Semiconductor Devices and ICs, 2000, pp. 115-118.
-
In IEEE /;?,. Svmp. Power Semiconductor Devices and ICs
, vol.2000
, pp. 115-118
-
-
Mori, M.1
Kobayashi, H.2
Yasuda, Y.3
-
15
-
-
0028485501
-
"Power semiconductor devices for variable frequency drives,"
-
B. J. Baliga, "Power semiconductor devices for variable frequency drives," P roc. IEEE, vol. 82, pp. 1 112-1122. 1994.
-
(1994)
P Roc. IEEE
, vol.82
, pp. 1112-1122
-
-
Baliga, B.J.1
-
16
-
-
0023290889
-
"Evolution of MOS-bipolar power semiconductor technology,"
-
1988.
-
_, "Evolution of MOS-bipolar power semiconductor technology," Proc. IEEE, vol. 76, pp. 409-418, 1988.
-
Proc. IEEE
, vol.76
, pp. 409-418
-
-
-
17
-
-
11244285765
-
"A 1 million cell 2 milliOhm 30V Trench FET." in
-
Abstract 14.4.1
-
R. K. Williams. "A 1 million cell 2 milliOhm 30V Trench FET." in IEEE Int. Electron Devices Meeting, 1997, Abstract 14.4.1, pp. 363-366.
-
IEEE Int. Electron Devices Meeting
, vol.1997
, pp. 363-366
-
-
Williams, R.K.1
-
18
-
-
0028427219
-
"Comparison ofultralow specific on-resistance UMOSFET structures,"
-
T. Syau, P. Venkatraman. and B. J. Baliga, "Comparison ofultralow specific on-resistance UMOSFET structures," IEEE Trans. Electron Devices, vol. 41. pp. 800-808, 1994.
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, pp. 800-808
-
-
Syau, T.1
Venkatraman, P.2
Baliga, B.J.3
-
19
-
-
33646914412
-
"Verical field effect transistors having improved breakdown voltage capability and low on-state resistance,"
-
B. .1. Baliga, "Verical field effect transistors having improved breakdown voltage capability and low on-state resistance," U.S. Patent 5 637 898,/une 10, 1997.
-
(1997)
U.S. Patent 5 637 898,/une 10
-
-
Baliga, B.1
-
20
-
-
0020310822
-
"The insulated gate rectifier,"
-
B. J. Baliga, M. S. Adler, p. V. Gray, R. P. Love, ar.d N. Zommer, "The insulated gate rectifier," in IEEE Int. Electron Devices Meeting, 1982, Abstract 10.6, pp. 264-267.
-
In IEEE Int. Electron Devices Meeting, 1982, Abstract 10.6
, pp. 264-267
-
-
Baliga, B.J.1
Adler, M.S.2
Gray, P.V.3
Love, R.P.4
Zommer, A.N.5
-
22
-
-
0034448280
-
-
T. Fujii, K. Yoshikawa, T. Koga. A. Nishiura, Y. Takahashi, H. Kakiki, M. Ichijyou. and Y. Seki, IEEE Ini. S\inp. Power Semiconductor Devices 'and ICs, 2000, pp. 33-36.
-
IEEE Ini. S\inp. Power Semiconductor Devices 'And ICs
, vol.2000
, pp. 33-36
-
-
Fujii, T.1
Yoshikawa, K.2
Koga, T.3
Nishiura, A.4
Takahashi, Y.5
Kakiki, H.6
Ichijyou, M.7
Seki, Y.8
-
25
-
-
0025385344
-
"The MOS-gated emitter switched thyristor,"
-
B. j. Baliga, "The MOS-gated emitter switched thyristor," IEEE Electron Device Lett., vol. 11, pp. 75-77, 1990.
-
(1990)
IEEE Electron Device Lett.
, vol.11
, pp. 75-77
-
-
Baliga, B.1
-
26
-
-
0026153209
-
"A new MOS-gated power thyristor with turn-off"achieved b controlling the base resistance,"
-
M. Nandakumar and B. j. Baliga, "A new MOS-gated power thyristor with turn-off"achieved b controlling the base resistance," IEEE Electron Device Lett., vol. 12, pp. 227-229, 1991.
-
(1991)
IEEE Electron Device Lett.
, vol.12
, pp. 227-229
-
-
Nandakumar, M.1
Baliga, B.2
-
29
-
-
33646941920
-
"Multifunctional semiconductor device having gate-controlled regenerative and non-regenerative conduction modes, method of operating same,"
-
5412228, .Viay
-
B. J. Baliga, "Multifunctional semiconductor device having gate-controlled regenerative and non-regenerative conduction modes, method of operating same," U.S. Paten; 5412228, .Viay 2, 1995.
-
(1995)
U.S. Paten
, pp. 2
-
-
Baliga, B.J.1
-
30
-
-
0029322093
-
"The dual gate base resistance controlled thyristor,"
-
B. 1 Baliga and R. Kurlagur.da, "The dual gate base resistance controlled thyristor," IEEE Electron Device Leu., vol. 16, pp. 223-225, 1995.
-
(1995)
IEEE Electron Device Leu.
, vol.16
, pp. 223-225
-
-
Baliga, B.1
Kurlagurda, R.2
-
32
-
-
33646926155
-
''Power loss comparison for the IGBT, Dg-BRT, and the DC-EST,"
-
A. Ramamurlhv and B. J. Baliga, ''Power loss comparison for the IGBT, Dg-BRT, and the DC-EST," PSRC Tech. Rep. TR-98-012, 1998.
-
(1998)
PSRC Tech. Rep. TR-98-012
-
-
Ramamurlhv, A.1
Baliga, B.J.2
-
34
-
-
33646925672
-
"Silicon carbide semiconductor devices having buried silicon carbide conduction barner layers therein,"
-
_, "Silicon carbide semiconductor devices having buried silicon carbide conduction barner layers therein," U.S. Patent 5543637, Sept. 6, 1996.
-
(1996)
U.S. Patent 5543637, Sept.
, pp. 6
-
-
-
36
-
-
0032598956
-
"COOLMOS-A new milestone in high voltage power VIOS." in
-
L. Lorenz, G. Deboy, A. Knapp, and M. März, "COOLMOS-A new milestone in high voltage power VIOS." in IEEE Int. Syrup. Pov,er Semiconductor Devices and ICs, 1999, pp. 3-10.
-
IEEE Int. Syrup. Pov,er Semiconductor Devices and ICs
, vol.1999
, pp. 3-10
-
-
Lorenz, L.1
Deboy, G.2
Knapp, A.3
März, M.4
-
37
-
-
0034449069
-
"Vtdmesh: Innovative technology for high voltage power MOSFETs,"
-
M. Saggio, D. Fagone, and S. .Vlusumeci, "Vtdmesh: Innovative technology for high voltage power MOSFETs," in IEEE Int. Symp. Power Semiconductor Devices and ICs, 2000. pp. 65-68.
-
In IEEE Int. Symp. Power Semiconductor Devices and ICs
, vol.2000
, pp. 65-68
-
-
Saggio, M.1
Fagone, D.2
Vlusumeci, S.3
-
38
-
-
0034447093
-
"Which is cooler, trench or multi-epitaxy?,"
-
T. Minato, T. Nitta, A. Uenisi, M. Yano, M. Harada, and S. Mine, "Which is cooler, trench or multi-epitaxy?," in IEEE Int. Syrup. Power Semiconductor Devices ana ICs, 2000, pp. 73-80.
-
In IEEE Int. Syrup. Power Semiconductor Devices Ana ICs
, vol.2000
, pp. 73-80
-
-
Minato, T.1
Nitta, T.2
Uenisi, A.3
Yano, M.4
Harada, M.5
Mine, S.6
-
42
-
-
0025575397
-
"Smart power technology: An elephantine opportunity,"
-
Abstr. 1.1.1.
-
B. J. Baliga, "Smart power technology: An elephantine opportunity," in IEEE Int. Electron Devices Meeting, 1990, Abstr. 1.1.1. pp. 3-6.
-
In IEEE Int. Electron Devices Meeting
, vol.1990
, pp. 3-6
-
-
Baliga, B.J.1
-
43
-
-
0029544640
-
"Smart power technology and the evolution from protective umbreila to complete system,"
-
Abstr. 1.2
-
B. Murari, "Smart power technology and the evolution from protective umbreila to complete system," in IEEE Int. Electron Devices Meeting, 1995, Abstr. 1.2, pp. 9-15.
-
In IEEE Int. Electron Devices Meeting
, vol.1995
, pp. 9-15
-
-
Murari, B.1
-
44
-
-
0027307186
-
"A threephase inverter 1C for AC220V with drastically small chip size and highly intelligent functions,"
-
N. Sakurai, M. Nemoto, H. Arakawa. and Y. Sugawara, "A threephase inverter 1C for AC220V with drastically small chip size and highly intelligent functions," in IEEE Int. Synip. Power Semiconductor Devices and ICs, 1993, pp. 310-315.
-
In IEEE Int. Synip. Power Semiconductor Devices and ICs
, vol.1993
, pp. 310-315
-
-
Sakurai, N.1
Nemoto, M.2
Arakawa, H.3
Sugawara, Y.4
-
46
-
-
0018714042
-
"High voltage thin layer devices (RESURF devices),"
-
Abstr. 10.1
-
J. Appels and H. M. J. Vaes, "High voltage thin layer devices (RESURF devices)," in IEEE Int. Electro,'. Devices Meeting, 1979, Abstr. 10.1, pp. 238-241.
-
In IEEE Int. Electro,'. Devices Meeting
, vol.1979
, pp. 238-241
-
-
Appels, J.1
Vaes, H.M.J.2
-
49
-
-
0027260253
-
"Junction and dielectrically isolated lateral ESTs for power ICs,"
-
Y. S. Huang, S. Sridhar, and B. J. Baliga, "Junction and dielectrically isolated lateral ESTs for power ICs," in IEEE Int. Symp. Power Semiconductor Devices and ICs, 1993, pp. 259-263.
-
In IEEE Int. Symp. Power Semiconductor Devices and ICs
, vol.1993
, pp. 259-263
-
-
Huang, Y.S.1
Sridhar, S.2
Baliga, B.J.3
-
50
-
-
0028695006
-
"High temperature performance of dielectricaliy isolated LDMOSFET,"
-
R. Sunkavalli, B. J. Baiiga, and Y. S. Haang, "High temperature performance of dielectricaliy isolated LDMOSFET," in IEEE Int. Symp. Power Semiconductor Devices and ICs, 1994, pp. 359-364.
-
In IEEE Int. Symp. Power Semiconductor Devices and ICs
, vol.1994
, pp. 359-364
-
-
Sunkavalli, R.1
Baiiga, B.J.2
Haang, Y.S.3
-
52
-
-
0030685445
-
"FBSOA of dielectricaliy isolated LDMOSFETs and LIGBTs,"
-
V. Nagapudi, R. Sunkavalli, and B. J. Baiiga, "FBSOA of dielectricaliy isolated LDMOSFETs and LIGBTs," in IEEE Int. Symp. Power Semiconductor Devices and ICs, 1997. pp. 297-300.
-
In IEEE Int. Symp. Power Semiconductor Devices and ICs
, vol.1997
, pp. 297-300
-
-
Nagapudi, V.1
Sunkavalli, R.2
Baiiga, B.J.3
-
53
-
-
0031273761
-
"Dielectricaliy isolated lateral merged PIN Schottky (LV1PS) diodes,"
-
R. Sunkavalli, B. J. Baliga, and A. Tamba, "Dielectricaliy isolated lateral merged PIN Schottky (LV1PS) diodes," IEEE Trans. Electron Devices, vol. 44, pp. 2011-2016, 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 2011-2016
-
-
Sunkavalli, R.1
Baliga, B.J.2
Tamba, A.3
-
55
-
-
0020098824
-
"Semiconductors for high voltage vertical channel field effect transistors,"
-
B. J. Baliga, "Semiconductors for high voltage vertical channel field effect transistors," J. AppL Phys., vol. 53, pp. 1759-1764, 1982.
-
(1982)
J. AppL Phys.
, vol.53
, pp. 1759-1764
-
-
Baliga, B.J.1
-
56
-
-
0024749835
-
"Power semiconductor device figure of merit for high frequency applications."
-
_, "Power semiconductor device figure of merit for high frequency applications." IEEE Electron Device Lett., vol. 10. pp. 455-457", 1989.
-
(1989)
IEEE Electron Device Lett.
, vol.10
, pp. 455-457
-
-
-
57
-
-
0033079457
-
"Temperature dependence of hole impact ioaiziuion coefficients in 4H and 6H
-
R. Raghunathan and B. J. Baiiga, "Temperature dependence of hole impact ioaiziuion coefficients in 4H and 6H SIC," Solid State Electron., vol. 43, pp. 199-211, 1999.
-
(1999)
SIC," Solid State Electron.
, vol.43
, pp. 199-211
-
-
Raghunathan, R.1
Baiiga, B.J.2
-
58
-
-
0002312554
-
"High voltage silicon carbide devices,"
-
B. J. Baiiga, "High voltage silicon carbide devices," in Proc. MRS Symp., vol. 512, 1998, pp. 77-89.
-
(1998)
In Proc. MRS Symp.
, vol.512
, pp. 77-89
-
-
Baiiga, B.J.1
-
59
-
-
0026940017
-
"Silicon carbide high voltage (400V) Schottky barrier diodes,"
-
VI. Bhatnagar and B. J. Baiiga, "Silicon carbide high voltage (400V) Schottky barrier diodes," IEEE Electron Device Lev.., vol. 13, pp. 501-503. 1992.
-
(1992)
IEEE Electron Device Lev..
, vol.13
, pp. 501-503
-
-
Bhatnagar, V.I.1
Baiiga, B.J.2
-
60
-
-
0028531328
-
"A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage,"
-
D. Aiok and B. J. Baiiga, "A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage," IEEE Electron Device Let:., vol. 15, pp. 394-395, 1994.
-
(1994)
IEEE Electron Device Let:.
, vol.15
, pp. 394-395
-
-
Aiok, D.1
Baiiga, B.J.2
-
61
-
-
0029324460
-
"High voilage 4H-SiC Schottky barrier diodes."
-
R. Raghunathan and B. J. Baüga, "High voilage 4H-SiC Schottky barrier diodes." IK F.F. Electron'De-iice LA, vol. 16, pp. 226-227, 1995.
-
(1995)
IK F.F. Electron'De-iice la
, vol.16
, pp. 226-227
-
-
Raghunathan, R.1
Baüga, B.J.2
-
62
-
-
0030216388
-
"Planar edge terminations for 4H-S1C devices,"
-
D. Alok and B. J. Baiiga, "Planar edge terminations for 4H-S1C devices," IEEE Tram. Electron Dei ice:, vol. 43, pp. 1315-1317, 1996.
-
(1996)
IEEE Tram. Electron dei Ice
, vol.43
, pp. 1315-1317
-
-
Alok, D.1
Baiiga, B.J.2
-
63
-
-
0031164554
-
"SiC device edge termination using finite area argon implantation,"
-
_, "SiC device edge termination using finite area argon implantation," IEEE Trans. Electron Deviens, vol. 44, pp. 1013-1017, 1997.
-
(1997)
IEEE Trans. Electron Deviens
, vol.44
, pp. 1013-1017
-
-
-
65
-
-
0030107490
-
"Excellent reverse blocking characteristics olhign voltage 4H-S1C Schottkj rectifiers with boron impianied edge termination,"
-
A. Itoh, T. Kimoto, and H. Matsunami. "Excellent reverse blocking characteristics olhign voltage 4H-S1C Schottkj rectifiers with boron impianied edge termination," IEEE Electron Device Lett., vol. 17, pp. i39-141, 1996.
-
(1996)
IEEE Electron Device Lett.
, vol.17
-
-
Itoh, A.1
Kimoto, T.2
Matsunami, H.3
-
66
-
-
0000633737
-
"A 3kV Schottky barrier diode in 4H-SJC,"
-
Q. Wahab, "A 3kV Schottky barrier diode in 4H-SJC," Appl. Phys. Leu., vol. 72, pp. 445-447, 1998.
-
(1998)
Appl. Phys. Leu.
, vol.72
, pp. 445-447
-
-
Wahab, Q.1
-
67
-
-
0031675667
-
"SiC merged p-n/Schottky for high voltage applications,"
-
vol. 264-268, 1998
-
R. Held, N. Kaminski, and E. Niemann, "SiC merged p-n/Schottky for high voltage applications," in Proc. 7th Int. Conf. Silicon Carhide, Ill-Nitrides and Related Materials, Materials Science Forum, vol. 264-268, 1998, pp. 1057-1060.
-
In Proc. 7th Int. Conf. Silicon Carhide, Ill-Nitrides and Related Materials, Materials Science Forum
, pp. 1057-1060
-
-
Held, R.1
Kaminski, N.2
Niemann, E.3
-
68
-
-
11644275425
-
"Junction barrier Schottky diodes in 4H-S1C and 6H-SIC,"
-
F. Dahlquist, C. M. Zetierling, M. Ostling, and K. Rottner, "Junction barrier Schottky diodes in 4H-S1C and 6H-SIC," in Proc. 7th Int. Conf. Silicon Carbide, Ill-Nitrides and Related Materials, .Materials Science Forum, vol. 264-268, 1998, pp. 1061-1064.
-
(1998)
In Proc. 7th Int. Conf. Silicon Carbide, Ill-Nitrides and Related Materials, .Materials Science Forum
, vol.264-268
, pp. 1061-1064
-
-
Dahlquist, F.1
Zetierling, C.M.2
Ostling, M.3
Rottner, K.4
-
69
-
-
33646942184
-
"Schottky barrier rectifier including Schottky barrier regions of differing barrier heights,"
-
Nov.
-
L. Tu and B. J. Baiiga. "Schottky barrier rectifier including Schottky barrier regions of differing barrier heights," U.S. Patent 5262668, Nov. 16. 1993.
-
(1993)
U.S. Patent 5262668
, pp. 16
-
-
Tu, L.1
Baiiga, B.J.2
-
70
-
-
0031699018
-
"A dual-metal trench Schouky pinch-rectifier in 4H-S1C,"
-
K. J. Schoen. I. P. Henning, J. M. Woodall, J. A. Cooper, and M. R. Melloch, "A dual-metal trench Schouky pinch-rectifier in 4H-S1C," in Proc. 7th Int. Conf. Silicon Carbide, ///-.VJ.'r/dW.v ami Related Material. !v!ateriais Science Forum, vol. 264-268, 1998, pp. 945-968.
-
(1998)
In Proc. 7th Int. Conf. Silicon Carbide, ///-.VJ.'r/dW.v Ami Related Material. !V!ateriais Science Forum, Vol. 264-268
, pp. 945-968
-
-
Schoen, K.J.1
Henning, I.P.2
Woodall, J.M.3
Cooper, J.A.4
Melloch, M.R.5
-
71
-
-
18844476380
-
"Performance and reliability issues of SiC Schottky diodes,"
-
vol. 338-342
-
R. Rupp, M. True, A. Mauder, E. Grieol, W. Werner, W. Bartsch, and D. Srephani, "Performance and reliability issues of SiC Schottky diodes," in Proc. 8th Int. Conf. Silicon Carbide, Ill-Nitrides and Related Materials, Materials Science Forum, vol. 338-342, 2000, pp. 1167-1170.
-
(2000)
In Proc. 8th Int. Conf. Silicon Carbide, Ill-Nitrides and Related Materials, Materials Science Forum
, pp. 1167-1170
-
-
Rupp, R.1
True, M.2
Mauder, A.3
Grieol, E.4
Werner, W.5
Bartsch, W.6
Srephani, D.7
-
72
-
-
0027558366
-
"Comparison of 6H-SIC, 3C-S1C, and Si for power devices,"
-
VI. Bhatnagar and B. .1. Baiiga, "Comparison of 6H-SIC, 3C-S1C, and Si for power devices," IEEE Trans. Electron Devices, vol. 40, pp. 645-655, 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, pp. 645-655
-
-
Bhatnagar, V.I.1
Baiiga, B.2
-
73
-
-
0042244968
-
"6H-SiC power devices,"
-
J. Palmour, "6H-SiC power devices," in Proc. IECEC, 1993, pp. 1249-1254.
-
In Proc. IECEC
, vol.1993
, pp. 1249-1254
-
-
Palmour, J.1
-
74
-
-
3643064437
-
"4H-SiC high temperature devices,"
-
-, "4H-SiC high temperature devices," ///TEC, vol. 2, pp. XV19-14, 1996.
-
(1996)
///TEC
, vol.2
-
-
-
75
-
-
0031362142
-
"l.'ikV 4H-S1C power VIOSFETs,"
-
A. K. Aggarwal, "l.'ikV 4H-S1C power VIOSFETs," IEEE Electron Device Lett., vol. 18, pp. 586-588, 1997.
-
(1997)
IEEE Electron Device Lett.
, vol.18
, pp. 586-588
-
-
Aggarwal, A.K.1
-
76
-
-
33646897342
-
''Silicon carbide field effect transistor,''
-
Aug. 16
-
B. J. Baiiga and M. Bhatnagar, ''Silicon carbide field effect transistor,'' U.S. Patent 5 338945, Aug. 16, 1994.
-
(1994)
U.S. Patent
, vol.5
, pp. 338945
-
-
Baiiga, B.J.1
Bhatnagar, M.2
-
77
-
-
0031103557
-
"High voltage double implanted power MOSFETs in 6H-SiC,"
-
J. N. Shenoy, J. A. Cooper, and M. R. Melloch, "High voltage double implanted power MOSFETs in 6H-SiC," IEEE Electron Device Lett., vol. IS, pp. 93-98, 1997.
-
(1997)
IEEE Electron Device Lett., Vol. IS
, pp. 93-98
-
-
Shenoy, J.N.1
Cooper, J.A.2
Melloch, M.R.3
-
81
-
-
33646948554
-
"High voltage
-
R. Chilukuri and B. J. Baiiga, "High voltage 4H-SiC ACCUFETs," PSRC Tech. Reps. TR-UO-005, TR-00-006, and TR-00-007, May 2(XXX_
-
PSRC Tech. Reps. TR-UO-005, TR-00-006, and TR-00-007, May 2XXX_
, vol.4
-
-
Chilukuri, R.1
Baiiga, B.J.2
-
82
-
-
33646913844
-
"Silicon carbide switching device with rectifying gate,"
-
396085, Mar. 7
-
B. J. Baiiga, "Silicon carbide switching device with rectifying gate," U.S. Paient 5 396085, Mar. 7, 1995. '
-
(1995)
U.S. Paient
, vol.5
-
-
Baiiga, B.J.1
-
84
-
-
0034449648
-
"SiC power devices with low or.-resisiance for fast switching applications,"
-
P. Friedrichs, H. Mitlehner, K. O. Dchnke, D. Peters, R. Schemer, U. Weinert, E. Baudeiot, and D. Stephani, "SiC power devices with low or.-resisiance for fast switching applications," in IEEE Int. Symp. Power Semiconductor Devices and td, 2000, pp. 213-216.
-
In IEEE Int. Symp. Power Semiconductor Devices and Td
, vol.2000
, pp. 213-216
-
-
Friedrichs, P.1
Mitlehner, H.2
Dchnke, K.O.3
Peters, D.4
Schemer, R.5
Weinert, U.6
Baudeiot, E.7
Stephani, D.8
|